Low-temperature polycrystalline silicon thin film transistor array substrate and manufacturing method thereof

Abstract

The invention provides a low-temperature polycrystalline silicon thin film transistor array substrate and a manufacturing method thereof. A gate insulation layer whose thickness is the odd number times a 1 / 4 laser wavelength on a patterned amorphous silicon to serve as an insulation layer. As the thickness of the gate insulation layer is the odd number times the 1 / 4 laser wavelength, the laser can pass through the gate insulation layer to the maximum degree to reach the patterned amorphous silicon, good crystallization processing is carried out on the patterned amorphous silicon, and large crystal grains are acquired. As the surface of the gate insulation layer is uniform, the passing laser thus uniformly irradiates on the patterned amorphous silicon, and the polycrystalline silicon with uniform crystal grains is thus formed.

Description

technical field [0001] The invention relates to the field of transistor manufacturing, in particular to a low-temperature polysilicon thin film transistor array substrate and a manufacturing method thereof. Background technique [0002] At present, TFT (Thin Film Transistor, thin-film transistor) used in AMOLED (Active-matrix organic light emitting diode, active-matrix organic light-emitting diode or active-matrix organic light-emitting diode) mostly uses low-temperature polysilicon as the active layer. The method of manufacturing TFT on AMOLED is to first form a buffer layer on a glass substrate, then deposit an amorphous silicon film on the buffer layer, and then perform a crystallization process of excimer laser annealing on the amorphous silicon film. Before the crystallization process, it needs The amorphous silicon film is cleaned, and an extremely thin oxide film is formed on the amorphous silicon film to form an insulating layer to reduce the cooling rate of crystall...

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Problems solved by technology

However, to form crystallized polysilicon by the above method, it is first necessary to form a concave arc surface on the oxide layer 1, and then perform laser crystallization. After the crystallization is completed, the oxide layer is removed. The process is more complicated and difficult to control; The laser light at the curved surface is refracted, so the crystallization effect of the polysilicon under the concave curved surface area will be poor, the overall crystallization uniformity of the polysilicon will be deteriorated, and the defect state density at the grain boundary will be higher, which will seriously affect the thin film transistor. electrical characteristics

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