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Micro single crystal silicon tool electrode for electrolytic machining and preparation method thereof

A tool electrode, single crystal silicon technology, applied in machining electrodes, electric machining equipment, electrode manufacturing and other directions, can solve the problems of large thermal expansion coefficient gap, short service life, weak metal adhesion, etc. Reduced size and high hardness

Active Publication Date: 2019-07-19
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, physical methods such as coating or nesting cannot achieve a close bond between the metal and the insulating layer, and its service life is generally short, and SiC or SiO 2 There is a large gap between the thermal expansion coefficients of materials such as materials and metals, and the insulating layer prepared by high-temperature deposition methods has poor adhesion to metals at room temperature.

Method used

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  • Micro single crystal silicon tool electrode for electrolytic machining and preparation method thereof
  • Micro single crystal silicon tool electrode for electrolytic machining and preparation method thereof
  • Micro single crystal silicon tool electrode for electrolytic machining and preparation method thereof

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preparation example Construction

[0037] see Figure 5 , the present invention provides a kind of preparation method of micro single crystal silicon tool electrode for electrolytic processing, it comprises the following steps:

[0038] S1, providing a single crystal silicon substrate, the substrate has an upper surface and a lower surface opposite to each other;

[0039] S2, preparing a protective layer on the upper and lower surfaces of the substrate as a mask window for the etching process, the mask window including the tool electrode profile and the back thinning window;

[0040] S3, etching the substrate to form a patterned micro-single crystal silicon tool electrode profile for electrolytic machining;

[0041] S4, completely removing the protective layer on the upper and lower surfaces of the substrate;

[0042] S5, depositing an insulating layer on all surfaces of the substrate;

[0043] S6, preparing a layer of patterned protective layer on the insulating layer, removing the partial insulating layer ...

Embodiment 1

[0049] see Figure 6 , in step S1, the single crystal silicon substrate 13 is selected from a highly doped N-type or P-type silicon wafer, preferably an N-type silicon wafer. Its doping concentration needs to be 10 16 ~10 20 / cm 2 range, preferably 10 19 ~10 20 / cm 2 range, more preferably 10 20 / cm 2 . Its resistivity is preferably 10 -3 Ω·cm. The (100) crystal face of the silicon wafer is selected, and the silicon wafer is polished on both sides. In this embodiment, the N-type silicon wafer with (100) crystal plane doped at a high concentration is selected, the thickness of the silicon wafer is 300 μm, and its resistivity is 10 -3 Ω·cm is a double-sided polished silicon wafer, such as Figure 7 (a) shown.

[0050] In step S2, a layer of silicon dioxide (SiO 2 ), and then a layer of silicon nitride (Si 3 N 4 ), constituting the mask layer 14 to prepare for patterning in the subsequent etching process. In this embodiment, the single crystal silicon substrate 1...

Embodiment 2

[0060] The difference between this embodiment and Embodiment 1 is that in step 1, the single crystal silicon substrate 13 is an undoped (100) crystal plane single crystal silicon wafer, and the thickness of the silicon wafer is 300 μm. The same contour etching process can be carried out, but the Si on the upper and lower surfaces of the single crystal silicon substrate 13 needs to be removed in step 4. 3 N 4 and SiO 2 After complete removal, a doping step of the monocrystalline silicon substrate 13 is added.

[0061] The specific steps are as follows: the monocrystalline silicon substrate 13 is overall doped, and the doping concentration needs to be 10 16 ~10 20 / cm 2 range, preferably 10 19 ~10 20 / cm 2 range, more preferably 10 20 / cm 2 . The doping type is P-type or N-type, preferably N-type. The doping method is thermal diffusion or ion implantation, and the doped impurity is phosphorus (P).

[0062] The micro-silicon single-crystal silicon tool electrode for e...

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Abstract

The invention relates to a micro monocrystalline silicon tool electrode for electrochemical machining. The micro monocrystalline silicon tool electrode comprises an electrode clamping part and an electrode processing part, wherein the electrode processing part is arranged on the electrode clamping part; the electrode clamping part and the electrode processing part are made of high-concentration doped monocrystalline silicon; in addition, side wall insulating layers are respectively arranged on the surfaces of the electrode clamping part and the electrode processing part. The electrode processing part is used for micro electrochemical machining. Besides, the invention also relates to a preparation method of the micro monocrystalline silicon tool electrode for the electrochemical machining.

Description

technical field [0001] The invention belongs to the technical field of special processing, and in particular relates to a micro tool electrode for electrolytic processing and a preparation method thereof. Background technique [0002] With the continuous development of science and technology, higher processing requirements are put forward for the shape, size and surface morphology of the microstructure on metal parts. The structure of holes and grooves with micro-scale is of great importance in the fields of automobiles, aerospace and precision instruments. application. At present, micro-electrolytic machining is an important processing method in the field of micro-manufacturing. Micro-electrolytic machining is a micro-machining method based on the principle of electrochemical reaction, and the workpiece material is etched in the form of ions during the processing process. The feasibility of micro-nano scale processing has potential advantages in micro-structure processing....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23H3/04B23H3/06
CPCB23H3/04B23H3/06
Inventor 李勇刘国栋周凯佟浩
Owner TSINGHUA UNIV
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