Semiconductor memory and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve the problems of slow memory response rate, affecting memory data reading ability, slow response speed, etc.
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[0057] The working principle of traditional semiconductor memory is to directly apply a voltage on the floating gate, and inject the charge in the channel into the floating gate through the tunnel oxide layer through the vertical electric field of the channel, which has the defects of high working voltage and slow reaction rate. ; At the same time, there is no protective layer on the surface of the floating gate, and the injected charges are easily lost through the surface of the floating gate, thereby weakening the data storage capacity of the memory.
[0058] After research and analysis by the inventors of the present invention, it is found that sequentially forming an inter-gate dielectric layer and a control gate on the surface of the floating gate can solve the performance defects of the traditional semiconductor memory. Taking a P-type device as an example, a negative voltage of -0.7 volts to -2.3 volts is applied to the control gate. Under the voltage range, more hot ele...
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