Write circuit structure for self-transfer torque magnetic random access memory

Abstract

The invention discloses a write circuit structure for a self-transfer torque magnetic random access memory. The write circuit structure for the self-transfer torque magnetic random access memory comprises a magnetic tunnel junction, a source line, a bit line, a word line, a first switching tube, a second switching tube, a control unit and a bistable circuit unit, wherein a free layer of the magnetic tunnel junction is connected with a drain of the first switching tube; a reference layer of the magnetic tunnel junction is connected with a source of the second switching tube; the source of the first switching tube is connected with the source line; the drain of the second switching tube is connected with the bit line; a first end of the bistable circuit unit is connected with the free layer of the magnetic tunnel junction and the input of the control unit; a second end of the bistable circuit unit is connected with the reference layer of the magnetic tunnel junction; an input end of the control unit is connected with each of the word line, the source line and the bit line; a first end of the bistable circuit unit and an output end of the control unit are connected with the grid of the first switching tube and that of the second switching tube. According to the write circuit structure, repeated writing action can be avoided, and the purposes of reducing the writing power consumption of an MRAM and the dynamic power consumption of a chip are achieved.

Description

technical field [0001] The invention relates to the technical field of nonvolatile memory, in particular to a write circuit structure of a spin torque transfer magnetic random access memory. Background technique [0002] The spin torque transfer magnetic random access memory (STT-MRAM) is a kind of non-volatile memory, and its storage structure adopts MTJ magnetic tunnel junction, such as figure 1 As shown, the middle layer is called the barrier layer, and the upper and lower layers are the free layer and the reference layer respectively. When writing data "0", the current flows from the reference layer through the free layer to make the MTJ (magnetic tunnel junction) flip to an antiparallel state; when writing data "1", the current flows from the free layer through the reference layer to make the MTJ (magnetic tunnel junction) knot) flips to the parallel state. To flip the magnetic tunnel junction, a certain voltage must be maintained at both ends of the magnetic tunnel j...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a write circuit structure of spin torque transfer magnetic random access memory, to solve the problem of repeated writing of most of the data bits in the prior art in practical application, and to shield the repeated writing through logic switch control Write operation, so as to achieve the purpose of reducing MRAM write power consumption and chip dynamic power consumption

Images