Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light

A change detection and extreme ultraviolet technology, applied in the field of optical detection, can solve the problems of slow in-situ detection methods, inability to detect efficiently, and inability to evaluate the size of defects, and achieve the effect of accurate identification, strong identification ability, and high detection accuracy.

Inactive Publication Date: 2017-01-04
NANJING UNIV OF SCI & TECH
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Problems solved by technology

The former can efficiently detect the defect location but cannot evaluate the defect size
The latter uses extreme ultraviolet light source illumination and uses microscopic magnification techno...

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  • Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light
  • Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light
  • Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light

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Embodiment

[0043] A method for detecting phase defects in an extreme ultraviolet mask based on the polarization change of scattered light, the steps are as follows:

[0044] Step 1. Build a device for detecting phase defects in EUV masks based on the polarization change of scattered light:

[0045] The device for detecting phase defects of an EUV mask based on the polarization change of scattered light includes an EUV light source 1 (λ=13.5nm), a first polarizer 2, a detection sample 3, a second analyzer 4, a detection receiver 5 and a pendulum arm, the EUV light source 1 is fixed on the swing arm, the EUV light source 1 emits EUV light, which is transformed into linearly polarized light by the first polarizer 2 and incident on the surface of the detection sample 3, which is reflected by the surface of the detection sample 3 and will carry the detection sample The linearly polarized light of the 3-plane information is incident on the second analyzer 4 , and then incident on the detection...

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Abstract

The invention discloses a method for detecting the phase type defect of an extreme ultraviolet mask based on polarization changes of scattered light. According to the method, an apparatus for detecting the phase type defect of the extreme ultraviolet mask based on the polarization changes of scattered light is arranged; a surface type information database is built by using a finite difference time-domain method; an elliptic polarization scattering measurement method is employed for acquiring information about polarization scrambling changes; a weighed least square regression method is used for processing polarization scrambling information introduced into the database; so the contour information of the defect is eventually obtained. The method has the characteristics of high detection precision, good defect identification capability, convenience and rapidness.

Description

technical field [0001] The invention belongs to the field of optical detection, and in particular relates to a method for detecting phase defects of an extreme ultraviolet mask based on the polarization change of scattered light. Background technique [0002] Photolithography is to transfer the pattern on the mask plate to the photoresist coated on the surface of the silicon wafer by exposure method, and then transfer the pattern to the silicon wafer by developing, etching and other processes. Extreme ultraviolet lithography (EUVL) is a next-generation lithography technology that uses extreme ultraviolet light (EUV, λ=13.5nm) as the exposure wavelength and is oriented to the 22nm node, or even below the 22nm node. Since any substance has absorption characteristics for EUV (13.5nm), a reflective reticle must be used in the exposure process, otherwise the reticle will absorb most of the EUV, resulting in insufficient exposure of the photoresist. A typical EUV reflective retic...

Claims

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Application Information

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IPC IPC(8): G01N21/88
Inventor 高志山赵彦窦建泰刘志颖袁群杨忠明王帅成金龙
Owner NANJING UNIV OF SCI & TECH
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