Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light

A change detection and extreme ultraviolet technology, applied in the field of optical detection, can solve the problems of slow in-situ detection methods, inability to detect efficiently, and inability to evaluate the size of defects, and achieve the effect of accurate identification, strong identification ability, and high detection accuracy.

Inactive Publication Date: 2017-01-04
NANJING UNIV OF SCI & TECH
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The former can efficiently detect the defect location but cannot evaluate the defect size
The latter uses extreme ultraviolet light source illumination and uses microscopic magnification technology to obtain enlarged images of extreme ultraviolet masks. This image can be used to analyze defect size information, but the in-situ detection method is slow and cannot detect defects efficiently

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light
  • Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light
  • Method for detecting phase type defect of extreme ultraviolet mask based on polarization changes of scattered light

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0043] A method for detecting phase defects in an extreme ultraviolet mask based on the polarization change of scattered light, the steps are as follows:

[0044] Step 1. Build a device for detecting phase defects in EUV masks based on the polarization change of scattered light:

[0045] The device for detecting phase defects of an EUV mask based on the polarization change of scattered light includes an EUV light source 1 (λ=13.5nm), a first polarizer 2, a detection sample 3, a second analyzer 4, a detection receiver 5 and a pendulum arm, the EUV light source 1 is fixed on the swing arm, the EUV light source 1 emits EUV light, which is transformed into linearly polarized light by the first polarizer 2 and incident on the surface of the detection sample 3, which is reflected by the surface of the detection sample 3 and will carry the detection sample The linearly polarized light of the 3-plane information is incident on the second analyzer 4 , and then incident on the detection...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for detecting the phase type defect of an extreme ultraviolet mask based on polarization changes of scattered light. According to the method, an apparatus for detecting the phase type defect of the extreme ultraviolet mask based on the polarization changes of scattered light is arranged; a surface type information database is built by using a finite difference time-domain method; an elliptic polarization scattering measurement method is employed for acquiring information about polarization scrambling changes; a weighed least square regression method is used for processing polarization scrambling information introduced into the database; so the contour information of the defect is eventually obtained. The method has the characteristics of high detection precision, good defect identification capability, convenience and rapidness.

Description

technical field [0001] The invention belongs to the field of optical detection, and in particular relates to a method for detecting phase defects of an extreme ultraviolet mask based on the polarization change of scattered light. Background technique [0002] Photolithography is to transfer the pattern on the mask plate to the photoresist coated on the surface of the silicon wafer by exposure method, and then transfer the pattern to the silicon wafer by developing, etching and other processes. Extreme ultraviolet lithography (EUVL) is a next-generation lithography technology that uses extreme ultraviolet light (EUV, λ=13.5nm) as the exposure wavelength and is oriented to the 22nm node, or even below the 22nm node. Since any substance has absorption characteristics for EUV (13.5nm), a reflective reticle must be used in the exposure process, otherwise the reticle will absorb most of the EUV, resulting in insufficient exposure of the photoresist. A typical EUV reflective retic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N21/88
Inventor 高志山赵彦窦建泰刘志颖袁群杨忠明王帅成金龙
Owner NANJING UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com