Terminal structure of super-junction MOS and manufacturing method thereof
A terminal structure and manufacturing method technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing device stability and reliability, unstable device performance, complex and cumbersome processes, etc., to improve stability, simplify structure, damage reduction effect
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[0031] The present invention is described in detail below in conjunction with accompanying drawing and specific embodiment:
[0032] The terminal structure of a super junction MOS of the present invention includes P-type pillars and N-type pillars, wherein: a polycrystalline field plate 7 is used in the transition region from the active region to the terminal region to make the electric field distribution smoothly transition from the active region To the terminal area, the alternating structure of P-type columns and N-type columns in the terminal area is used to balance the electric field charge, wherein, the N-type epitaxial layer 2 is grown on the heavily doped N+ substrate 1, and the N-type epitaxial layer 2 An oxide layer is grown on the surface, and the trench in the active area and the trench ring in the terminal area are etched through the photolithography plate using deep groove etching. In this embodiment, the trench is a P-type trench 3, assuming that the trench width...
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