Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Humidity sensor based on organic field effect transistor and preparing method thereof

A technology of humidity sensor and transistor, applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of poor flexibility, environmental pollution, low sensitivity, etc., and achieve the effects of strong flexibility, solving secondary pollution, and simple preparation process

Inactive Publication Date: 2016-12-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems in the prior art, the present invention provides a biodegradable flexible humidity sensor based on an organic field effect transistor and a preparation method thereof, which solves the problem of low sensitivity of the existing humidity sensor and further solves the problem Solve the problems of poor flexibility and easy pollution to the environment existing in the existing humidity sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Humidity sensor based on organic field effect transistor and preparing method thereof
  • Humidity sensor based on organic field effect transistor and preparing method thereof
  • Humidity sensor based on organic field effect transistor and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The preparation method is as follows:

[0039] ① Thoroughly clean the PI substrate sputtered with 50nm ITO as the gate electrode, and dry it with dry nitrogen after cleaning;

[0040] ② Prepare a PS film on ITO by spin coating to form a gate insulating layer of 100nm;

[0041] ③The spin-coated PS film is heated and baked;

[0042] 4. Spin coating indigo on the grid insulating layer: the organic semiconductor layer 100nm of bacterial cellulose nanofiber mass ratio is 97:3;

[0043] ⑤ Vacuum evaporation is used to prepare 80nm copper source electrodes and drain electrodes.

[0044] The humidity response characteristics of the device are tested, and the saturation current I of the device is measured SD =6μA, carrier mobility μ=0.02×10 -3 cm 2 / Vs, threshold voltage V TH = -4V, poor response to humidity at room temperature

Embodiment 2

[0046] The preparation method is as follows:

[0047] ① Thoroughly clean the PEI substrate sprayed with 80nm silver nanowires as the gate electrode, and dry it with dry nitrogen after cleaning;

[0048]② Prepare a PMMA film on the silver nanowire by spin coating method to form a gate insulating layer of 520nm;

[0049] ③Heating and baking the spin-coated PMMA film;

[0050] 4. Spin coating indigo on the grid insulating layer: the organic semiconductor layer 120nm of bacterial cellulose nanofiber mass ratio is 94:6;

[0051] ⑤ Vacuum evaporation is used to prepare silver source electrode and drain electrode 70nm.

[0052] The humidity response characteristics of the device are tested, and the saturation current I of the device is measured SD =8μA, carrier mobility μ=0.008×10 -3 cm 2 / Vs, threshold voltage V TH =-10V, poor response to humidity at room temperature.

Embodiment 3

[0054] The preparation method is as follows:

[0055] ① Thoroughly clean the shellac substrate sputtered with 70nm ITO as the gate electrode, and dry it with dry nitrogen after cleaning;

[0056] ② Prepare a PVA film on ITO by spin coating method to form a 20nm gate insulating layer;

[0057] ③The spin-coated PVA film is heated and baked;

[0058] 4. Spin coating indigo on the grid insulating layer: the organic semiconductor layer 100nm of bacterial cellulose nanofiber mass ratio is 90:10;

[0059] ⑤ Prepare gold source electrode and drain electrode 50nm by vacuum evaporation.

[0060] The humidity response characteristics of the device are tested, and the saturation current I of the device is measured SD =9μA, carrier mobility μ=0.02×10 -3 cm 2 / Vs, threshold voltage V TH =-3V, good response to humidity at room temperature.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a humidity sensor based on an organic field effect transistor and a preparing method thereof. The humidity sensor comprises a substrate, a gate electrode, a gate insulation layer, an organic semiconductor layer and source and drain electrodes from bottom to top in sequence, wherein the organic semiconductor layer is formed by mixing of one or more of indigo blue or indigo blue derivatives and bacterial cellulose nanofiber, and the mass percentage of bacterial cellulose nanofiber is 3-20%. By means of high orientation property of bacterial cellulose nanofiber, the morphology of an organic semiconductor film and the size of organic material crystalline grains are controlled precisely, water adsorbability of the semiconductor film is improved, and mechanical strength and flexibility of electronic devices are effectively improved; furthermore, indigo blue or indigo blue derivatives and bacterial cellulose nanofiber have high biocompatibility and biodegradability, so that the problem of ecological pollution caused by electronic waste can be effectively solved, and the humidity sensor can be widely applied to the field of portable wearable flexible sensors.

Description

technical field [0001] The invention relates to the field of humidity sensors, in particular to a humidity sensor based on an organic field effect transistor and a preparation method thereof. Background technique [0002] Humidity is a physical quantity that indicates the dryness of the atmosphere, and is closely related to human social activities. With the development of modernization, accurate measurement of humidity is becoming more and more important in meteorology, medicine, hydrology, and industrial and agricultural production. [0003] There are many types of humidity sensors, mainly including resistive humidity sensors, capacitive humidity sensors, electrolyte ion humidity sensors and weight humidity sensors. At present, research hotspots at home and abroad are mainly focused on resistive humidity sensors and capacitive humidity sensors, which measure the specific magnitude of humidity in the atmosphere by detecting changes in the resistivity and permittivity of the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/00
CPCG01N27/00
Inventor 于军胜范惠东韩世蛟郑华靖
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com