Bimetallic/ceramic composite film and preparation method thereof
A technology of ceramic composite and ceramic composite layer, applied in metal material coating process, ion implantation coating, coating and other directions, to achieve the effect of maintaining stable optical properties and improving thermal stability
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Embodiment 1
[0043] Place the quartz wafer and (100) single crystal silicon wafer to be plated in the deposition chamber, pre-evacuate, and the background vacuum is 2×10 - 4 Pa, heat the quartz sheet and (100) single crystal silicon sheet to make the temperature 150°C, and at the same time, pass in Ar gas to increase the pressure of the vacuum chamber to 0.49Pa, keep it warm for 40min for desorption, and remove the impurities physically adsorbed on the surface of the substrate , which is conducive to improving the bonding force between the film and the substrate; then close the introduction of Ar gas, and re-pump the deposition chamber to 2×10 -4 Pa, and Ar gas was fed again to increase the pressure of the deposition chamber to 0.49Pa; turn on the RF bias of the substrate, set its power to 80W and glow, sputter for 5min, and further clean the surface of the substrate; turn off the cleaning bias and Turn on the RF driving power of the alumina target, adjust its power to 120W, and pre-sputt...
Embodiment 2
[0049] Place the quartz plate to be plated in the deposition chamber, pre-evacuate, and the background vacuum is 1.2×10 -4 Pa, heat the quartz substrate to a temperature of 150°C, and at the same time pass in Ar gas to increase the pressure of the deposition chamber to 0.49Pa, keep it warm for 40 minutes for desorption, and remove physically adsorbed impurities on the surface of the substrate, which is beneficial to enhance the film and substrate The binding force between the sheets; then close the flow of Ar gas, and re-pump the deposition chamber to 1.2×10 -4 Pa, and Ar gas was fed again to increase the pressure of the deposition chamber to 0.49Pa; turn on the RF bias of the substrate, set its power to 80W and glow, sputter for 5min, and further clean the surface of the substrate; turn off the cleaning bias and Turn on the RF driving power of the alumina target, adjust its power to 120W, and pre-sputter for 70 minutes. At the same time, turn on the driving power of the W tar...
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