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Transfer method of CVD method prepared graphene

A transfer method and graphene technology, which is applied in the field of graphene preparation, can solve problems such as poor square resistance uniformity and increased adhesion square resistance, and achieve the effects of increased concentration, counteracted square resistance increase, and strong high temperature resistance

Active Publication Date: 2016-11-16
WUXI GRAPHENE FILM +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to address the deficiencies in the prior art, and provide a method that can greatly increase the adhesion between the target substrate and graphene while solving the problem of increased square resistance or poor uniformity of square resistance caused by the transfer problem. Transfer method of graphene prepared by CVD method

Method used

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Direct transfer method, see flow chart figure 1 , including the following steps:

[0038] 1) Dissolving the polymer m(PVP):m(VP / VA)=5:1 in ethanol to form a mixed solution with 0.1wt% PVP and 0.02wt% VP / VA;

[0039] 2) Coating the mixed solution on the target substrate PET (commercially available, with a thickness of 150 μm), the coating method adopts the soaking and pulling method, and the coated PET is dried at 70 ° C;

[0040] 3) Attach the grown graphene / metal / graphene to the polymer surface of the target substrate, and apply a pressure of 0.2MPa at 80-150°C;

[0041] 4) Hydrochloric acid / hydrogen peroxide (also can be ammonium persulfate solution, FeCl 3 solution, sulfuric acid / hydrogen peroxide solution) etching to obtain the target product.

[0042] The square resistance of the single-layer graphene film obtained by the method of this embodiment is about 200Ω, and the adhesion force between graphene and the target substrate is about 11N / 25mm; After processing...

Embodiment 2

[0044] Adhesive film transfer method, see flow chart figure 2 , including the following steps:

[0045] 1) Dissolving the polymer m(PVP):m(VP / VA)=5:1 in ethanol to form a mixed solution with 0.1wt% PVP and 0.02wt% VP / VA;

[0046] 2) Coating the mixed solution on the target substrate PET (commercially available, with a thickness of 50 μm), the coating method is the soaking and pulling method, and the coated PET is naturally dried at room temperature;

[0047] 3) one side of the graphene of the film / graphene structure obtained in the film transfer method is attached to the polymer surface of the target substrate, and a pressure of 0.2 MPa is applied at 80-150 ° C;

[0048] 4) Remove the film to obtain the target product.

[0049] The square resistance of the single-layer graphene film obtained by the method of this embodiment is 200Ω, and the adhesion force between graphene and the target substrate is about 11N / 25mm; After treatment, the square resistance of the obtained graph...

Embodiment 3

[0051] Direct transfer method, see flow chart figure 1 , including the following steps:

[0052] 1) Dissolving the polymer m(PVP):m(VP / VA)=2:1 in ethanol to form a mixed solution with 0.8wt% PVP and 0.04wt% VP / VA;

[0053] 2) Coating the mixed solution on the surface of the target substrate. The material of the target substrate is glass (commercially available, with a thickness of 500 μm). The coating method is spin coating, and the coated glass is dried at 150° C.;

[0054] 3) Attach the grown graphene / metal / graphene or adhesive film to the polymer surface of the target substrate, and apply a pressure of 0.2MPa at 80-150°C;

[0055] 4) The target product can be obtained by etching with hydrochloric acid / hydrogen peroxide (ammonium persulfate solution, FeCl3 solution, sulfuric acid / hydrogen peroxide solution) attached to graphene / growth substrate / .

[0056] The square resistance of the graphene film obtained by the method of this embodiment is about 200Ω, and the adhesion be...

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Abstract

The invention discloses a transfer method of CVD method prepared grapheme, characterized in that in a process of the existing transfer method, a target substrate is treated first, i.e. a layer of polymer solution is applied on the surface of the target substrate, and the solvent in the polymer is eliminated by drying. The polymer provided by the invention not only has strong adhesiveness on graphene, but also groups favorable for graphene doping are contained. Therefore, adhesive force between the target substrate and the graphene can achieve the 4B level, square resistance rise of monolayer graphene after transfer is almost zero, certain reduction effect is played, and the standard deviation rate of square resistance of a full piece (for example, 360mm*290mm) of graphene can not exceed 5%.

Description

technical field [0001] The invention relates to an improved method in the transfer process of preparing graphene by a gas phase deposition method (CVD method), and belongs to the field of graphene preparation methods. Background technique [0002] Liquid crystal display elements and touch panels are widely used in electronic devices such as personal computers, televisions, mobile phones, and car navigation systems. In devices such as these liquid crystal display elements and touch panels, it is necessary to use a transparent conductive film for a part of transparent wiring, pixel electrodes, or terminals. As the material of the transparent conductive film, materials such as indium tin oxide have been mostly used for a long time, but since the indium element is a rare metal, and the oxide of indium is poisonous, it is not environmentally friendly. In this context, graphene materials have received great attention. Since graphene is a two-dimensional structure with a thickness...

Claims

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Application Information

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IPC IPC(8): C01B31/04
Inventor 秦喜超杨军谭化兵
Owner WUXI GRAPHENE FILM
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