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A thermochromic intelligent dimming film with low phase transition temperature and preparation method thereof

A technology of phase change temperature and intelligent light adjustment, which is applied in chemical instruments and methods, optics, nonlinear optics, etc.

Active Publication Date: 2019-08-02
GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the limitations of the prior art in the process of preparing low-phase-change-temperature thermal-color intelligent dimming films, the invention solves the quantitative doping of external element target configuration, preparation process, preparation or production efficiency, and improves the light and heat of intelligent dimming films. In view of the problems of chemical properties, anti-oxidation properties and off-site processability, a low phase transition temperature smart dimming film and its preparation method were proposed

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  • A thermochromic intelligent dimming film with low phase transition temperature and preparation method thereof
  • A thermochromic intelligent dimming film with low phase transition temperature and preparation method thereof
  • A thermochromic intelligent dimming film with low phase transition temperature and preparation method thereof

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Embodiment 1

[0045] Such as figure 1 As shown, a thermochromic smart dimming film with a low phase transition temperature includes a substrate 1 , a first dielectric layer 2 , a vanadium oxide layer 3 , a crystallization-promoting layer 4 , an anti-oxidation layer 5 and a second dielectric layer 6 . The substrate 1 is a glass material, the first dielectric layer 2 is a TiOx material, the vanadium oxide layer 3 is a vanadium oxide material with phase change properties, the crystallization-promoting layer 4 is a SiNx material, the anti-oxidation layer 5 is a NiCr material, and the second The dielectric layer 6 is made of SiNx material.

[0046] The preparation method of the thermochromic intelligent dimming film of described low phase transition temperature is as follows: adopt magnetron sputtering coating mode, adopt TiOx successively (in Ar, O 2 atmosphere), V (in Ar, O 2 atmosphere), Si (in Ar, N 2 atmosphere), NiCr (under Ar atmosphere), Si (under Ar, N 2 atmosphere) as a target, seq...

Embodiment 2

[0049] Such as figure 2As shown, a thermochromatic smart dimming film with a low phase transition temperature includes a substrate 11, a first dielectric layer 21, a first anti-oxidation layer 31, a first crystallization-promoting layer 41, a vanadium oxide layer 51, a second The crystallization-promoting layer 61 , the second anti-oxidation layer 71 and the second dielectric layer 81 . The substrate 11 is made of glass material, the first dielectric layer 21 is made of TiOx material, the first anti-oxidation layer 31 is made of NiCrOx material, the first crystallization-promoting layer 41 is made of ZrNx material, and the vanadium oxide layer 51 is vanadium oxide with phase change properties material, the second crystallization-promoting layer 61 is made of SiNx material, the second anti-oxidation layer 71 is made of NiCr material, and the second dielectric layer 81 is made of SiNx material.

[0050] The preparation method of the thermochromic intelligent dimming film of de...

Embodiment 3

[0053] Such as image 3 As shown, a thermochromatic smart dimming film with a low phase transition temperature includes a substrate 12, a first dielectric layer 22, a first anti-oxidation layer 32, a first crystallization-promoting layer 42, a vanadium oxide layer 52, a second The crystallization-promoting layer 62 , the second anti-oxidation layer 72 and the second dielectric layer 82 . The substrate 12 is made of glass material, the first dielectric layer 22 is made of SiNx material, the first anti-oxidation layer 32 is made of NiCrOx material, the first crystallization-promoting layer 42 is made of SiNx material, and the vanadium oxide layer 52 is made of vanadium oxide with phase change properties. materials, the second crystallization-promoting layer 62 is SiNx material, the second anti-oxidation layer 72 is a NiCrOx-NiCr composite layer, and the second dielectric layer 82 is an ITO-SiNx composite layer.

[0054] The preparation method of the thermochromic intelligent di...

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Abstract

The invention provides a thermochromatic intelligent dimming film with low phase transition temperature and a preparation method thereof. The thermochromic intelligent dimming film is provided with a vanadium oxide layer with phase change properties on the substrate; in particular, at least one surface of the vanadium oxide layer is compounded with a crystallization-promoting layer; the material of the crystallization-promoting layer is selected One or more of metal nitrides, alloy nitrides, silicon nitrides, and silicon alloy nitrides that have the function of promoting the vanadium oxide layer to form nanometer grains. The thermochromic intelligent dimming film provided by the present invention does not need to dope other elements that lower the phase transition temperature in the vanadium oxide material with phase transition properties, but only needs to control the oxidation phase transition properties through the material selection and setting of the film layer. The vanadium material layer is formed into the size of nanometer small grains, and the phase transition temperature of the film layer can be controlled within a certain range.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a thermochromic intelligent dimming film with a low phase transition temperature and a preparation method thereof. Background technique [0002] VO 2 As a new type of energy-saving material, it can undergo a unique phase transition near the phase transition temperature of 68°C. When the ambient temperature is higher than the phase transition temperature, VO 2 It has a tetragonal crystal structure, has metal phase characteristics, and can reflect infrared rays; when the ambient temperature is lower than the phase transition temperature, VO 2 It has a monoclinic crystal structure, has semiconductor phase characteristics, and can pass through infrared rays. Therefore VO 2 The film layer can undergo a phase change under sunlight irradiation to obtain a solar regulation rate of no less than 20%. Therefore, since Morin discovered its phase change functional characteri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/36C03C27/00C03C27/12C23C14/34C23C14/35C23C14/08C23C14/06C23C14/18C23C14/20C23C14/58G02F1/00B32B17/06
CPCG02F1/009C23C14/0036C23C14/0641C23C14/08C23C14/083C23C14/185C23C14/205C23C14/34C23C14/352C23C14/5806C03C17/36C03C17/3618C03C17/3626C03C17/3649C03C17/366C03C27/00B32B17/06C03C2218/156B32B2307/554B32B2255/20C03C17/3644C03C17/3435
Inventor 詹勇军徐刚肖秀娣
Owner GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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