N-plane gan-based fin-type high electron mobility transistor and manufacturing method

A technology with high electron mobility and manufacturing method, which is applied in the field of high-speed and low-power integrated circuits, can solve the problems of poor two-dimensional electron gas confinement, high ohmic contact resistance, and weak short-channel effect suppression ability, etc. The effect of small current collapse, improving the switching current ratio, and suppressing the short channel effect

Active Publication Date: 2019-03-26
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The device uses a Ga-face GaN-based structure. Compared with N-face GaN-based devices, Ga-face GaN-based devices have higher ohmic contact resistance, poor two-dimensional electron gas confinement, and short-channel effects. Inhibition is also weak

Method used

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  • N-plane gan-based fin-type high electron mobility transistor and manufacturing method
  • N-plane gan-based fin-type high electron mobility transistor and manufacturing method
  • N-plane gan-based fin-type high electron mobility transistor and manufacturing method

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Experimental program
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Effect test

Embodiment 1

[0031] Embodiment 1: Fabricate an N-plane GaN-based fin-type high electron mobility transistor with a substrate of sapphire, a GaN buffer layer thickness of 1 μm, and a fin-type GaN / AlGaN heterojunction width of 200 nm.

[0032] Step 1: growing a buffer layer.

[0033] exist Figure 4 (a) On the sapphire substrate shown in (a), a layer of N-face GaN buffer layer with a thickness of 1 μm was grown on the sapphire substrate by molecular beam epitaxy MBE. -3 Pa.

[0034] Step 2: growing a barrier layer.

[0035] A layer of AlGaN with a thickness of 20nm was grown on the GaN layer by MBE, and the Al composition gradually changed from 5% to 30% from bottom to top; another layer of AlGaN with a thickness of 10nm and an Al composition of 30% was grown layer, the technological conditions for its growth are: the growth temperature is 680°C, and the pressure is 5×10 -3 Pa.

[0036] Step 3: growing a channel layer.

[0037] On the AlGaN layer, a GaN channel layer with a thickness o...

Embodiment 2

[0050] Embodiment 2: Fabricate an N-plane GaN-based fin-type high electron mobility transistor with SiC substrate, GaN buffer layer thickness of 2 μm, and fin-type GaN / AlGaN heterojunction width of 400 nm.

[0051] Step 1: Growth buffer layer.

[0052] On the SiC substrate, a layer of N-face GaN buffer layer with a thickness of 2 μm is grown by molecular beam epitaxy MBE. The growth process conditions are:

[0053] The growth temperature is 680°C and the pressure is 5×10 -3 Pa.

[0054] Step 2: Growing a barrier layer.

[0055] A layer of AlGaN with a thickness of 20nm was grown on the GaN layer by MBE, and the Al composition gradually changed from 5% to 30% from bottom to top; another layer of AlGaN with a thickness of 8nm and an Al composition of 30% was grown layer, the process conditions for its growth are:

[0056] The growth temperature is 680°C and the pressure is 5×10 -3 Pa.

[0057] Step 3: growing a channel layer.

[0058] On the AlGaN layer, a layer of N-face...

Embodiment 3

[0070] Embodiment 3: Fabricate an N-plane GaN-based fin-type high electron mobility transistor with a SiC substrate, a GaN buffer layer thickness of 2.5 μm, and a fin-type GaN / AlGaN heterojunction width of 500 nm.

[0071] Step A: growing a buffer layer on the substrate.

[0072] Using molecular beam epitaxy MBE equipment at a temperature of 680°C and a pressure of 5×10 -3 Under the process condition of Pa, an N-face GaN buffer layer with a thickness of 2.5 μm is grown on the SiC substrate.

[0073] Step B: growing a barrier layer on the buffer layer.

[0074] Using molecular beam epitaxy MBE equipment at a temperature of 680°C and a pressure of 5×10 -3 Under the process conditions of Pa, a layer of AlGaN with a thickness of 20nm is first grown on the GaN buffer layer, and the Al composition is gradually changed from 5% to 30% from bottom to top, and the thickness of another layer is 5nm, and the Al composition is 30%. AlGaN layer.

[0075] Step C: growing a channel layer ...

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Abstract

The invention discloses an N-face Gan-based fin type high electron mobility transistor (HEMT). The invention mainly aims at addressing the problems of poor gate-controlled capability and large source resistance and drain resistance of current small-sized HEMTs. The transistor includes from top to bottom a substrate, a GaN buffer layer, an AIGan barrier layer, a GaN channel layer, a gate medium layer, a passivation layer and a source electrode, a drain electrode, and a gate electrode. The GaN buffer layer and the GaN channel layer adopt an N-face GaN material. The AIGaN barrier layer includes two layers of AIGaNs, and AI components of a first layer AIGaN material changes gradually. The GaN channel layer and the AIGan barrier layer constitute a GaN / AIGaN heterojunction. The source electrode, the drain electrode, and the gate electrode are respectively arranged on the left and right ends of the GaN barrier layer and the GaN channel layer. The gate electrodes cover the two sides of and above the fin type GaN / AIGaN heterojunction. According to the invention, the transistor has the advantages of small source and drain resistance, small gate leakage current and excellent gate-controlled capability, and can serve as a small-sized, high-speed and low-consumption device.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, and specifically relates to an N-face GaN-based fin-type high-electron mobility transistor Fin-HEMT high-speed device structure and manufacturing method, which can be used for small-sized high-speed and low-power integrated circuits. Background technique [0002] As a third-generation semiconductor material, GaN material is considered to be an excellent material for making microwave power devices and high-speed devices due to its advantages such as large band gap, high concentration of two-dimensional electron gas 2DEG, and high electron saturation velocity. Especially the AlGaN / GaN heterojunction high electron mobility transistor HEMT has wide application value in military and commercial aspects. [0003] With the shrinking of transistor size, the gate length is getting shorter and shorter, and the short channel effect of traditional high electron mobility transistor HEMT becomes...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/04H01L29/06H01L29/20H01L29/207H01L29/417H01L29/423H01L29/778H01L21/28H01L21/335B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01L29/045H01L29/0684H01L29/2003H01L29/207H01L29/4175H01L29/41775H01L29/42356H01L29/66462H01L29/7781
Inventor 张金风黄旭安阳张进成郝跃
Owner XIDIAN UNIV
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