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External resonator type light emitting device

A technology of external resonator and light-emitting device, which is applied in the structure, instrument, optics and other directions of optical resonator cavity, and can solve the problems of light intensity change and so on.

Inactive Publication Date: 2016-08-24
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this FP-type laser oscillates at a wavelength at which the standing wave condition is established, the longitudinal mode tends to become multimode. In particular, when the current or temperature changes, the oscillation wavelength changes, thereby changing the light intensity.

Method used

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  • External resonator type light emitting device
  • External resonator type light emitting device
  • External resonator type light emitting device

Examples

Experimental program
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Effect test

Embodiment 1

[0177] made as figure 2 , Figure 5 , Image 6 device shown.

[0178] Specifically, a Ti film was formed on a substrate obtained by z-cutting MgO-doped lithium niobate crystals, and a grating pattern was formed in the y-axis direction by photolithography. After that, fluorine-based reactive ion etching is performed using the Ti pattern as a mask, thereby forming b 100μm grating groove. The groove depth of the grating is 40nm. In addition, in order to form an optical waveguide propagating in the y-axis, a dry etching process is performed using a reactive ion etching device (RIE) to form a ridge-shaped trench.

[0179] Here, let the optical waveguide width W at the Bragg grating 12 m 3μm, height T r 0.5 μm. At the same time, if figure 2 As shown, a connection portion 20a with a constant width, a tapered portion 20b and an emission portion 20c with a constant width are provided. The dimensions of each part are as follows.

[0180] Optical waveguide width W at the con...

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PUM

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Abstract

A semiconductor laser light source (2) is equipped with an active layer (5) for emitting semiconductor laser light. A grating element comprises: a ridge-type optical waveguide (18) having an incident surface (11a) on which the semiconductor laser light is incident and an exit surface (11b) from which exit light having a desired wavelength goes out; a Bragg grating (12) consisting of recesses and protrusions formed in the ridge-type optical waveguide (18); an exit-side propagation portion (20) provided between the Bragg grating (12) and the exit surface (11b). A laser oscillation occurs in the region of wavelengths reflected by the Bragg grating. The optical waveguide width (Wm) at the Bragg grating (12) is different from the optical waveguide width (Wout) at the exit surface.

Description

technical field [0001] The present invention relates to an external resonator type light emitting device using a grating element. Background technique [0002] The semiconductor laser generally adopts a Fabry-Perot (FP) type semiconductor laser, and the Fabry-Perot (FP) type semiconductor laser constitutes an optical resonator sandwiched by mirrors formed on both end surfaces of the active layer. However, since this FP type laser oscillates at a wavelength at which the standing wave condition is established, the longitudinal mode tends to become multimode. In particular, when the current or temperature changes, the oscillation wavelength changes, thereby changing the light intensity. [0003] Therefore, for purposes such as optical communication and gas sensing, a single-mode laser with high wavelength stability is required. Therefore, distributed feedback (DFB) lasers or distributed reflective (DBR) lasers were developed. In these lasers, a diffraction grating is installe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/14G02B6/12G02B6/122G02B6/42
CPCG02B6/1228G02B6/124G02B2006/12097H01S5/146H01S5/1014H01S2301/163H01S5/0287H01S2301/185H01S5/0654H01S5/141H01S5/14H01S5/028H01S5/0612
Inventor 近藤顺悟山口省一郎吉野隆史武内幸久
Owner NGK INSULATORS LTD
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