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Preparation method of W-plated diamond/aluminum composite

An aluminum composite material, diamond technology, applied in metal material coating process, sputtering plating, ion implantation plating and other directions, can solve the problems of poor interface bonding and low thermal conductivity of composite materials, and achieve good thermal conductivity, Improve thermal conductivity and thermal expansion coefficient matching effect

Active Publication Date: 2016-08-24
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention is to solve the reaction between diamond and aluminum to generate Al 4 C 3 , the technical problems of poor interfacial bonding and low thermal conductivity of the obtained composite material provide a preparation method of W-coated diamond / aluminum composite material

Method used

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  • Preparation method of W-plated diamond/aluminum composite
  • Preparation method of W-plated diamond/aluminum composite
  • Preparation method of W-plated diamond/aluminum composite

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specific Embodiment approach 1

[0020] Specific implementation mode 1: The preparation method of W-coated diamond / aluminum composite material in this implementation mode:

[0021] 1. W plating on the surface of diamond particles:

[0022] Using a tungsten target, the pretreated diamond particles were subjected to a magnetron sputtering pressure of 5×10 -3 ~9×10 -3 Pa, the sputtering voltage is 600V, the sputtering current is 0.9A, and the sputtering temperature is 300°C, sputtering for 90-360min to obtain W-coated diamond particles with a W coating thickness of 50-200nm;

[0023] 2. Preheating: Fill the mold with W-coated diamond particles, place the pure aluminum ingot in the crucible, place the mold and the crucible with the pure aluminum ingot in the vacuum furnace, and vacuum at a speed of 25°C / min Raise the temperature to 500°C, keep it warm for 20 minutes, then raise the temperature to 700°C within 10 minutes, melt the pure aluminum ingot in the crucible and pour it into a mold filled with W-coated d...

specific Embodiment approach 2

[0026] Embodiment 2: This embodiment differs from Embodiment 1 in that the tungsten target described in Step 1 is a circular tungsten target with a purity of 99.99%, a diameter of 100 mm, and a thickness of 50 mm. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0027] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the diamond particles described in Step 1 are MBD4, with a particle size of 100-200 μm. Others are the same as those in the first or second embodiment.

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Abstract

A preparation method of W-plated diamond / aluminum composite relates to a preparation method of a metal-based composite. In order to solve the technical problem that since diamond and aluminum react to produce Al4C3, the obtained composite has poor interfacial adhesion and low heat conductivity. The method includes: first, coating the surface of diamond particles with W; second, preheating; third, infiltrating under pressure: applying a pressure of 10-15 Mpa with an intra-furnace press so that molten aluminum infiltrates the W-coated diamond particles, cooling at a speed of 100 DEG C / h to below 300 DEG C, relieving pressure, turning off a vacuum furnace, and demolding to obtain the W-plated diamond / aluminum composite; diamond is 55-65% in volume fraction, > / =98% in compactness, up to 622 W / (m.K) in heat conductivity, down to 7.08*10-6 / K in thermal expansion coefficient and up to 304 Mpa in flexural strength. The invention belongs to the field of preparation of composites.

Description

technical field [0001] The invention relates to a preparation method of a metal matrix composite material. Background technique [0002] With the advent of the information age, with the rapid development of electronic technology, the feature size of electronic components has been continuously reduced, the degree of integration of integrated circuits is increasing, and the heat generation is increasing, which leads to the continuous increase of the operating temperature of integrated circuits. , Seriously affect its work stability and safety reliability. How to effectively dissipate heat has become a bottleneck in the development of electronic packaging technology. Traditional electronic packaging materials can no longer meet the needs of high-speed electronic packaging technology for high thermal conductivity of materials. It is imminent to develop new electronic packaging materials with high thermal conductivity, low density, matching thermal expansion coefficient, and suf...

Claims

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Application Information

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IPC IPC(8): C22C21/00C22C26/00C22C1/10B22D23/04C23C14/35C23C14/18
CPCC22C1/101C22C1/1036C22C21/00C22C26/00C23C14/185C23C14/223C23C14/35B22D23/04C22C1/1073
Inventor 陈国钦代晨王平平武高辉张强姜龙涛修子扬康鹏超苟华松
Owner HARBIN INST OF TECH
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