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Copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial and synthetic method therefor, and thin film battery

A composite nanomaterial, copper indium gallium selenide technology, applied in the field of battery material preparation, can solve problems such as poor structural controllability, and achieve the effects of low cost, easy mass production, and reduced production cost

Active Publication Date: 2016-08-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

[0004] In order to overcome the technical problem of poor controllability of the product structure of the existing antimony-doped copper indium gallium selenide material, the invention provides a copper indium gallium selenium copper antimony selenium composite nanomaterial and its synthesis method, thin film battery

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  • Copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial and synthetic method therefor, and thin film battery
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  • Copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial and synthetic method therefor, and thin film battery

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[0027] In order to make the objectives, technical solutions and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and implementation examples. It should be understood that the specific embodiments described herein are only used to explain the present invention, but not to limit the present invention.

[0028] The first embodiment of the present invention provides a method for synthesizing a copper indium gallium selenide copper antimony selenium composite nanomaterial, which includes the following steps: step S1 preparation of selenium precursor solution, step S2 preparation of copper indium gallium selenide precursor solution (CIGS) , Step S3 preparation of copper antimony precursor solution (CAS), and step S4 synthesis required copper indium gallium selenide copper antimony selenide composite nanomaterials.

[0029] In the present invention, the sequence relationship betwee...

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Abstract

The invention relates to a synthetic method for a copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial. The synthetic method comprises the following steps of providing a selenium precursor solution, a copper-indium-gallium-selenium precursor solution and a copper-stibium precursor solution, wherein the total molar weight of the selenium element in the three kinds of precursor liquid is 1.5-3 times of that of the copper element; enabling the selenium precursor solution and the copper-stibium precursor solution to be injected into the copper-indium-gallium-selenium precursor solution, heating to 100-300 DEG C; and taking a long-chain alkene compound as a chelating agent to synthesize the copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial. The invention also relates to the copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial synthesized by the method, and a thin film battery applying the copper-indium-gallium-selenium and copper-stibium-selenium composite nanomaterial.

Description

【Technical field】 [0001] The invention relates to the field of battery material preparation, in particular to a copper indium gallium selenide copper antimony selenium composite nanomaterial, a synthesis method thereof, and a thin film battery. 【Background technique】 [0002] Copper indium gallium selenide thin-film solar cells have the remarkable characteristics of low production cost, low pollution, no decay, and good low-light performance. One-third of the solar cells, known as the next generation of very promising new thin-film solar cells, have been a hotspot of research and development in recent years. [0003] At present, in the research of copper indium gallium selenide thin film, it is found that antimony-doped copper indium gallium selenide thin film can significantly improve the conversion rate of solar cells. However, at present, there are many problems in the existing doping methods such as vacuum method and non-vacuum method. Taking the vacuum method as an ex...

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Application Information

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IPC IPC(8): H01L31/032H01L31/0749B82Y30/00
CPCB82Y30/00H01L31/0322H01L31/0749Y02E10/541
Inventor 张晓琨杨咏梅向勇高诗光夏天培
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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