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Cadmium zinc telluride (CdZnTe) X-ray detector for nitrogen thermoelectric cooling

A CdZnTe detector technology, applied in the field of detectors, can solve the problems of large noise and low energy resolution of CdZnTe detectors, and achieve the effect of improving signal-to-noise ratio, improving energy resolution, and eliminating current noise

Active Publication Date: 2016-08-10
CHENGDU UNIVERSITY OF TECHNOLOGY
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a CdZnTe X-ray detector filled with nitrogen gas semiconductor refrigeration, which solves the problem of large noise caused by the use of non-resetting charge-sensitive amplifiers in conventional CdZnTe detectors and the energy loss of conventional CdZnTe detectors. low resolution problem

Method used

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  • Cadmium zinc telluride (CdZnTe) X-ray detector for nitrogen thermoelectric cooling
  • Cadmium zinc telluride (CdZnTe) X-ray detector for nitrogen thermoelectric cooling
  • Cadmium zinc telluride (CdZnTe) X-ray detector for nitrogen thermoelectric cooling

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Embodiment 1

[0025] Embodiment 1: as Figure 4 As shown, D1 is a CdZnTe detector, the feedback capacitor C2 is 0.045pF, which is made of copper sheet, the JFET field effect transistor Q1 is made of a bare wafer, C1 is the parasitic capacitance of the CdZnTe detector, and C3 is the reset capacitor . Under the bias voltage of 300V, the CdZnTe detector can work normally. When the X-ray enters the CdZnTe detector, the detector converts it into a certain amount of charge signal, and the charge signal passes through the JFET field effect transistor Q1 After amplifying with the amplifying circuit of the subsequent stage, the corresponding voltage signal is obtained. The charge sensitive amplifier used in this design is a reset type, and the corresponding voltage signal obtained can be a step ramp signal, such as Figure 4shown. When the output step signal rises to a certain preset voltage, the reset circuit will output a pulse signal with a fixed pulse width, and reset the output signal throug...

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Abstract

The invention discloses a cadmium zinc telluride (CdZnTe) X-ray detector for nitrogen thermoelectric cooling. The outside of a CdZnTe detector is provided with a shielding case. A hole is disposed in the shielding case and covered with a double-sided opaque aluminum laminated film. The inside of the shielding case is provided with a thermoelectric cooler. The thermoelectric cooler cools a constant low temperature drive circuit through an external cooler. The CdZnTe detector in the shielding case receives and converts an X-ray into a charge signal, and obtains an ideal nuclear pulse signal after the amplification through a reset type charge sensitive amplifier. The invention has the beneficial effects of eliminating current noises brought by a discharge resistor, improving the signal to noise ratio, and effectively improving the energy resolution of the system.

Description

technical field [0001] The invention belongs to the technical field of detectors, and relates to a nitrogen-filled CdZnTe X-ray detector for semiconductor refrigeration. Background technique [0002] X-rays were discovered by German physicist W.K. Roentgen in 1895, and have been widely used in medical treatment, geology, mining, metallurgy, petrochemical, building materials, environmental protection, commodity inspection, archaeology and other fields. At present, how to measure and obtain high-resolution X-ray energy spectrum is a common concern of everyone. [0003] In the past 10 years or so, the ternary compound semiconductor CdZnTe crystal detector has rapidly developed into an X-ray detector that works at room temperature. CdZnTe (20% ZnTe, 80% CdTe) crystal has a high resistivity (about 10 11 Ω.cm), large atomic number (Cd atomic number is 48, Te atomic number is 52), large forbidden band width and so on. The chemical expression of CdZnTe crystal is Cd 1-x Zn x Te,...

Claims

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Application Information

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IPC IPC(8): G01T1/24
CPCG01T1/244
Inventor 曾国强程锋葛良全罗耀耀谷懿张庆贤马永红杨强
Owner CHENGDU UNIVERSITY OF TECHNOLOGY
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