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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of low luminous efficiency and high cost of QLED, achieve enhanced hole injection ability, avoid corrosion, and improve luminescence efficiency effect

Inactive Publication Date: 2016-08-03
TCL CORPORATION
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Problems solved by technology

[0004] In view of the above deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problems of low luminous efficiency and high cost of the existing QLED

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  • Quantum dot light-emitting diode and preparation method thereof

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Embodiment Construction

[0029] The present invention provides a quantum dot light-emitting diode and a preparation method thereof. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0030] see figure 1 , figure 1 It is a flowchart of a preferred embodiment of a method for preparing a quantum dot light-emitting diode of the present invention, as shown in the figure, which includes steps:

[0031] S1. Spin-coat a layer of non-acidic lipophilic organics on the ITO substrate, and then heat and anneal;

[0032] S2. Spin-coat PEDOT:PSS on the surface of the non-acidic lipophilic organic matter as a hole injection layer, and then heat and anneal;

[0033] S3, spin-coating a layer of hole transport material on the hole injection layer ...

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Abstract

The invention discloses a quantum dot light-emitting diode and preparation method thereof. The preparation method includes the steps of: A. spin-coating a layer of non-acidic lipophilic organic matter on an ITO substrate, and then performing heating and annealing; B. spin-coating PEDOT on the surface of the non-acidic lipophilic organic matter: using PSS as a hole injection layer, and then performing heating and annealing; C. spin-coating a layer of hole transport material on the hole injection layer as a hole transport layer, and then performing thermal treatment; D. depositing a quantum dot light-emitting layer on the surface of the hole transport layer, and then performing thermal treatment; E. depositing an electron transport layer and an electron injection layer on the surface of a quantum dot in sequence; and F. evaporating a cathode on the ITO substrate on which functional layers are deposited. Through the preparation method, processes of ultraviolet oxidation treatment and oxygen plasma treatment are omitted in a manufacturing process, and process steps are simplified. The non-acidic lipophilic organic matter can better sink into holes, and thus a hole injection capability is enhanced, thereby improving the luminous efficiency of a QLED.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Semiconductor quantum dots have been widely used in light-emitting diodes, solar cells, and bioluminescent labels due to their size-tunable optoelectronic properties. After more than 20 years of development of quantum dot synthesis technology, people have been able to synthesize various high-quality semiconductor quantum dot materials, and their photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QLEDs) have attracted extensive attention and research in the fields of lighting and display in recent years due to their many advantages such as high brightness, low power consumption, wide color gamut, and easy processing. After years of development, QLED technology has achieved tremendous development. However, the luminous efficiency of the current...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K30/865H10K50/115H10K71/00
Inventor 刘佳曹蔚然杨一行钱磊
Owner TCL CORPORATION
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