High-voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor

Abstract

The invention discloses a high-voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor comprising a substrate, an N-type lateral double-diffused metal oxide semiconductor field effect transistor formed on the substrate, and a P-type metal oxide semiconductor field effect transistor formed on the drain of the N-type lateral double-diffused metal oxide semiconductor field effect transistor. The gate of the P-type metal oxide semiconductor field effect transistor is used as the gate of the high-voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor, the drain of the P-type metal oxide semiconductor field effect transistor is used as the drain of the high-voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor, and the source of the N-type lateral double-diffused metal oxide semiconductor field effect transistor is used as the source of the high-voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor. The high-voltage P-type lateral double-diffused metal oxide semiconductor field effect transistor has the advantages of simple process, low cost, and resistance to high voltage.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, in particular to a high-voltage P-type lateral double-diffusion metal oxide semiconductor field effect transistor. Background technique [0002] The traditional Ptype Lateral Double-diffused Metal Oxide Semiconductor field effect transistor (PtypeLateralDouble-diffusedMetalOxideSemiconductorfieldeffecttransistor, PLDMOS) structure requires a certain length of low-doped P-type drift region to achieve high voltage resistance, so in the high-voltage NLDMOS (N-type lateral double-diffused metal Oxide Semiconductor Field Effect Transistor) and PLDMOS high-voltage integration process, it is necessary to add a low-doped P-type region photolithography, which increases the process complexity and process cost. figure 1 It is a schematic diagram of the structure of a traditional PLDMOS. Such as figure 1 As shown, in order to achieve high voltage resistance and integration with high volta...

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Problems solved by technology

[0002] The traditional Ptype Lateral Double-diffused Metal Oxide Semiconductor field effect transistor (PtypeLateralDouble-diffusedMetalOxideSemiconductorfieldeffecttransistor, PLDMOS) structure requires a certain length of low-doped P-type drift region to achieve high voltage resistance, so in the high-voltage NLDMOS (N-type lateral double-diffused metal Oxide semiconductor field effect transistor) and PLDMOS high-voltage integration process, need to add a low-doped P-type region photolithography, which increases the process complexity and process cost

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