Manufacturing method of semiconductor device

Abstract

The invention discloses a manufacturing method of a semiconductor device. The manufacturing method comprises the steps of providing a semiconductor substrate, wherein the semiconductor substrate comprises a first region, the first region is provided with a stacked gate structure, the stacked gate structure comprises a floating gate, an inter-gate dielectric, a control gate, a mask layer and a buffer oxidation layer which are stacked in sequence form the bottom up, depositing a polycrystalline silicon layer on the semiconductor substrate, wherein the polycrystalline silicon layer covers the stacked gate structure, carrying out grinding on the polycrystalline silicon layer so as to expose the buffer oxidation layer, removing the buffer oxidation layer by adopting an etching process, and carrying out back-etching on the polycrystalline silicon layer. Grinding residues or polycrystalline silicon remains can be prevented from adhering to the control gate by adopting the manufacturing method disclosed by the invention.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a semiconductor device. Background technique [0002] In order to reduce the cost and simplify the process steps of semiconductor devices, it has gradually become a trend to integrate the memory cell and peripheral cell devices on the same chip, such as integrating flash memory and logic devices on the same chip. On the same chip, the integrated device is called embedded flash memory. [0003] Such as figure 1 As shown, in the prior art embedded flash memory, the semiconductor substrate 100 includes a flash memory region 100a and a logic device region 110b, the flash memory region 100a is used for preparing flash memory, and the logic device region 110b is used for preparing logic devices. A stacked gate structure 110 is prepared on the flash memory area 100a, and the stacked gate structure 110 includes a floating gate 111, an inter...

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Problems solved by technology

The particles11 are difficult to remove, thus affecting the performance of the embedded flash memory

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