Method for directly growing graphene on insulating substrate through remote catalysis of copper particle

A technology of copper particles on an insulating substrate, applied in nanotechnology, coating, nanotechnology, etc. for materials and surface science, can solve complex transfer, graphene cannot be directly applied to electronic devices, etc., to avoid transfer Process effect

Active Publication Date: 2016-07-27
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the chemical vapor deposition method is generally used in the industry to prepare large-area graphene, but the prepared graphene cannot be directly applied to electronic devices, and complex transfer is required. Realizing the direct growth of graphene on an insulating substrate is a key point in the field of graphene preparation. important topic

Method used

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  • Method for directly growing graphene on insulating substrate through remote catalysis of copper particle
  • Method for directly growing graphene on insulating substrate through remote catalysis of copper particle
  • Method for directly growing graphene on insulating substrate through remote catalysis of copper particle

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Effect test

Embodiment 1

[0026] Cut commercially available quartz wafers into 1cm*1cm quartz wafer substrates, wash them with detergent and deionized water first, then clean the quartz substrates with ethanol and acetone solvents by ultrasonic waves for 30 minutes, and then wash them with deionized water Rinse and dry at 60°C, then anneal at 1000°C for 20 minutes. Immerse the treated quartz substrate in 0.1M copper acetate solution for 10 minutes, take it out and put it into a chemical vapor deposition (CVD) reaction furnace after drying. The high-temperature furnace is kept sealed, and 230 sccm of argon and 15 sccm of hydrogen are introduced Remove the air in the tube for 30 minutes, then keep the flow rate of argon and hydrogen constant and raise the temperature to 1000°C at a rate of 20°C / min. After holding for 30 minutes, feed 15sccm of methane, adjust the flow rate of hydrogen to 5sccm, and the reaction time is 20 minutes. Stop feeding methane after the reaction is finished, keep the flow of argo...

Embodiment 2

[0028] Cut commercially available quartz wafers into 1cm*1cm quartz wafer substrates, wash them with detergent and deionized water first, then clean the quartz substrates with ethanol and acetone solvents by ultrasonic waves for 30 minutes, and then wash them with deionized water Rinse and dry at 60°C, then anneal at 1000°C for 20 minutes. Immerse the treated quartz substrate in 0.1M copper acetate solution for 10 minutes, take it out and put it into a chemical vapor deposition (CVD) reaction furnace after drying. The high-temperature furnace is kept sealed, and 230 sccm of argon and 15 sccm of hydrogen are introduced Remove the air in the tube for 30 minutes, then keep the flow rate of argon and hydrogen constant and raise the temperature to 1000°C at a rate of 20°C / min. After holding for 30 minutes, feed 15sccm of methane, adjust the flow rate of hydrogen to 5sccm, and the reaction time is 10 minutes. Stop feeding methane after the reaction is finished, keep the flow of argo...

Embodiment 3

[0030] A single-layer monodisperse silica nanosphere-coated substrate was prepared, and the silica nanosphere substrate was annealed at 1000° C. for 20 minutes. Immerse the treated silica nanosphere substrate in 0.1M copper acetate solution for 10 minutes, take it out and put it into a chemical vapor deposition (CVD) reaction furnace after drying. Remove the air in the tube with 15 sccm of hydrogen for 30 minutes, then keep the flow rate of argon and hydrogen constant and raise the temperature to 1000 °C at a rate of 20 °C / min. for 20 minutes. After the reaction, the feeding of methane was stopped, the flows of argon and hydrogen were kept constant, and the mixture was naturally cooled to room temperature to obtain a graphene / silicon dioxide nanosphere composite material.

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Abstract

The invention discloses a method for directly growing graphene on an insulating substrate through remote catalysis of copper particles. Specifically, the method comprises the following steps: uniformly coating a high-temperature-resistant insulating substrate of silicon dioxide, aluminum oxide, aluminum nitride, magnesium oxide, zirconium oxide, boron carbide or silicon carbide with cupric acetate in a steeping manner, and by using a chemical vapor deposition method, implementing remote assistant in-situ catalytic growth of graphene by using copper nanoparticles generated from the cupric acetate at high temperature, thereby preparing a graphene composite conductive material. By adopting the method, continuous, large-scale and low-defect graphene can be generated, complex transfer procedures are avoided, the graphene can grow along the structure of a substrate in a full-wrapping manner, duplication of the substrate structure can be achieved by using the graphene, and the prepared material can be used in multiple fields such as the photovoltaic industry and the electric conduction industry.

Description

technical field [0001] The invention belongs to the field of graphene preparation, and in particular relates to a method for directly growing graphene on an insulating substrate through remote catalysis of copper particles. Background technique [0002] Since its discovery, graphene has become a research hotspot for scientists due to its special optical, electrical, mechanical, thermal and other properties. These excellent properties make it have potential application prospects in the fields of micro-nano devices, supercapacitors, sensors, and energy storage. In many fields of graphene research, the preparation of graphene, especially the preparation of graphene with large size, high quality and controllable layer number, has become the key to the large-scale application of graphene. At present, the chemical vapor deposition method is generally used in the industry to prepare large-area graphene, but the prepared graphene cannot be directly applied to electronic devices, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04B82Y30/00B82Y40/00C03C17/22
CPCB82Y30/00B82Y40/00C01P2002/82C01P2004/03C03C17/22C03C2217/28
Inventor 李德增韩霜霜单永奎刘莉月
Owner EAST CHINA NORMAL UNIV
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