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Silicon solar cell integrated with bypass diode and preparation method of silicon solar cell

A technology of silicon solar cells and bypass diodes, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high system risk, difficult implementation of isolation technology, complex production process, etc., and achieve simple process, enhanced stability and Reliability, Difficulty Reduction Effects

Active Publication Date: 2016-07-13
天津恒电空间电源有限公司 +1
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention solves technical problems such as complex production process, high system risk, and difficult implementation of isolation technology in the background technology, and provides a silicon solar cell structure design and its process that can realize an integrated bypass diode with an isolation process that is simple to implement, Its stability and high reliability can meet the needs of space solar arrays

Method used

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  • Silicon solar cell integrated with bypass diode and preparation method of silicon solar cell
  • Silicon solar cell integrated with bypass diode and preparation method of silicon solar cell

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Embodiment 1

[0054] A silicon solar cell with integrated bypass diodes. The positive and negative poles of the solar cell module are connected in parallel with the bypass diodes. A boron expansion isolation ring is provided between the battery body and the bypass diode, and an oxidation ring is provided on the boron expansion isolation ring. Protection, realize electrode interconnection on the oxidation protection layer. The boron-diffused isolation ring makes the main area of ​​the battery and the bypass diode isolated through the reciprocal PN junction in the ring; the boron diffusion makes the isolation area a P + area, the P + On the one hand, the region forms a P / N junction with the N-type material of the bypass diode, and uses the photovoltaic effect of the semiconductor to generate a photo-generated voltage; on the other hand, the P + It forms a P / N junction with the N-type region of the main battery area, and the two PN junctions are in opposite directions.

Embodiment 2

[0056] A method for preparing a silicon solar cell with integrated bypass diodes, comprising the following process steps:

[0057] First, the substrate adopts P-type single-sided polishing, crystal orientation , resistivity 10Ω·cm±1Ω·cm, thickness 0.16m±0.02mm type silicon wafer; then the product is manufactured according to the following process sequence.

[0058] 1. Silicon wafer oxidation 1:

[0059] Turn on the diffusion furnace, pass dry oxygen at 1900mL / min to 2000mL / min, and raise the temperature to 700°C.

[0060] Put the silicon wafer into the oxidized quartz boat, place the oxidized quartz boat at the mouth of the wet oxygen oxidation furnace, and preheat for 5 minutes to 10 minutes. Then push the oxidized quartz boat into the constant temperature zone, raise the temperature to 1020°C, start timing, first pass dry oxygen for 10 minutes, then pass wet oxygen for 58 minutes, finally turn on dry oxygen, and turn off the diffusion furnace for heating after passing dry o...

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Abstract

The invention relates to a silicon solar cell integrated with a bypass diode and a preparation method of the silicon solar cell integrated with the bypass diode and belongs to the physical power source technical field. According to the structure of the silicon solar cell integrated with the bypass diode, the bypass diode is connected in parallel between the anode and cathode of a solar cell component; a boron diffusion isolating ring is arranged between the main body of the cell and the bypass diode; the boron diffusion isolating ring is provided with an oxidation ring for protection; and electrode interconnection is realized on an oxidation protective layer. The preparation method of the silicon solar cell integrated with the bypass diode includes the following steps of: 1, silicon wafer oxidation; 2, isolation trench photoetching; 3, Boron diffusion; 4, slotting; 5, silicon oxidation; 6, diode emission area photoetching; 7, deep phosphorus diffusion; 8, cell emission area photoetching; 9, shallow phosphorus diffusion; 10, silicon wafer oxidation; 11, electrode opening photoetching; 12, upper electrode evaporation; 13, lower electrode evaporation; and 14, dicing. The preparation method of the silicon solar cell integrated with the bypass diode of the invention has the advantages of physical isolation between the cell main region and the bypass diode, obvious effects, low technical difficulty, high stability and reliability of product space utilization, and the like.

Description

technical field [0001] The invention belongs to the technical field of physical power sources, and in particular relates to a silicon solar cell with integrated bypass diodes and a preparation method thereof. Background technique [0002] At present, in order to prevent the solar cell from being damaged by the hot spot effect, a bypass diode needs to be connected in parallel between the positive and negative electrodes of the solar cell module. The function of the bypass diode is to act as a bypass when the hot spot effect of the cell cannot generate electricity, so that the current generated by other cells flows out of the diode, so that the solar power generation system continues to generate electricity, and will not be caused by a cell. The power generation circuit is blocked due to the problem. [0003] The existing silicon solar cell arrays for space use the production process of welding and bonding bypass diodes around the cells, which greatly reduces the production e...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0443H01L31/18H01L21/764
CPCY02E10/50Y02P70/50
Inventor 梁存宝
Owner 天津恒电空间电源有限公司
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