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Method for preparing nanocrystalline diamond film by adopting helicon wave plasma technology

A nanocrystalline diamond, plasma technology, applied in metal material coating process, coating, gaseous chemical plating and other directions, can solve the problems of difficult process parameters, filament performance degradation, low hot filament CVD deposition rate, etc.

Active Publication Date: 2016-07-13
SUZHOU UNIV
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Problems solved by technology

However, they all have some disadvantages, including: microwave plasma CVD equipment is expensive, and the deposition chamber design needs to be simulated; the deposition rate of hot wire CVD is low, and the performance of the filament decays during the deposition process; the process parameters of DC arc plasma jet CVD Difficult to control, easy to pollute electrodes

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  • Method for preparing nanocrystalline diamond film by adopting helicon wave plasma technology
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  • Method for preparing nanocrystalline diamond film by adopting helicon wave plasma technology

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Embodiment Construction

[0025] The present invention will now be described in further detail with reference to the drawings and embodiments. These drawings are simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, and therefore only show the constitutions related to the present invention.

[0026] The method for preparing nanocrystalline diamond film by spiral wave plasma technology adopted in the present invention includes the following steps:

[0027] (1) Using crystal orientation as The single crystal Si as the substrate is cleaned by industrial standard wet method to remove the natural oxide layer and various dirt on the Si surface. The cleaned Si substrate is placed on the substrate stage and fixed, and then the discharge chamber is evacuated to a background vacuum. After pumping to the background vacuum, the Ar gas and H 2 The gas is passed into the discharge chamber, and Ar and H are realized through the spiral wave plasma modulate...

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Abstract

The invention relates to a method for preparing a nanocrystalline diamond film by adopting a helicon wave plasma technology. The method comprises the following steps: (1) introducing Ar gas and H2 gas into a discharge chamber, realizing Ar and H2 mixed gas discharge through radio frequency modulated helicon wave plasma in an axial magnetic field environment, and cleaning a substrate holder and a Si substrate; (2) closing H2 gas, introducing Ar gas and CH4 gas, and forming a nanocrystalline diamond film on the Si substrate through the radio frequency modulated helicon wave plasma in the axial magnetic field environment; and (3) cleaning the CH4 gas adsorbed to the surface of the nanocrystalline diamond film. According to the invention, the nanocrystalline diamond film is successfully prepared by the helicon wave plasma technology, the used equipment is simple, the industrial production is easy to realize, the deposition speed is high, and the problem that the filament performance is degraded is solved; moreover, the process steps are simple, and the process parameters are easy to control.

Description

Technical field [0001] The invention relates to a method for preparing a nanocrystalline diamond film, in particular to a method for preparing a nanocrystalline diamond film using spiral wave plasma technology. Background technique [0002] Diamond is the substance with the tightest arrangement of atoms. Its crystal structure determines that it has many excellent physical and chemical properties, such as extremely high hardness and elastic modulus, very low coefficient of thermal expansion, high fracture strength, and large Band gap, extremely low dielectric constant, etc. Nanocrystalline diamond (NCD) film generally refers to a diamond film with an average grain size below 100 nm. Due to the size effect, nanocrystalline diamond also exhibits many unique physical and chemical properties. For example: In addition to many excellent physical and chemical properties of the above-mentioned diamond, nanocrystalline diamond also has higher optical transmittance, lower friction coeffic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/505
CPCC23C16/272C23C16/279C23C16/505
Inventor 於俊黄天源季佩宇杨佳奇金成刚吴雪梅诸葛兰剑
Owner SUZHOU UNIV
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