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Mask optimization method of photoetching machine

An optimization method and technology of lithography machines, applied in the field of lithography machines, can solve problems such as increased complexity of masks, lack of guidance in crossover and mutation operations of genetic algorithms, and weak approximation ability of optimal solutions

Active Publication Date: 2016-05-11
SHENZHEN JINGYUAN INFORMATION TECH CO LTD
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Problems solved by technology

However, the crossover and mutation operations of the genetic algorithm lack clear guidance, and the ability to approximate the optimal solution is weak
In addition, due to the excessive number of optimization variables in mask optimization based on pixel representation, the complexity of the optimized mask increases and the manufacturability of the mask is reduced.

Method used

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  • Mask optimization method of photoetching machine
  • Mask optimization method of photoetching machine
  • Mask optimization method of photoetching machine

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Embodiment Construction

[0061] The present invention will be further described below in conjunction with the examples and drawings, but the examples should not limit the protection scope of the present invention.

[0062] see first Figure 1 to Figure 3 , figure 1 It is a schematic diagram of the lithography machine system used in the present invention. It can be seen from the figure that the method involves a light source 1 for the lighting system of the lithography machine, a mask 2, a projection objective lens 3, and a silicon wafer 4. figure 2 It is a schematic diagram of the lighting mode of the light source used in the present invention. The initial lighting mode of the light source is dipole lighting, the internal coherence factor is 0.6, the external coherence factor is 0.8, the size is 21×21 pixels, and the brightness value of the white area is 1. The brightness value of the black area is 0. image 3 It is a schematic diagram of the initial mask pattern used in the present invention. The ...

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Abstract

The invention relates to a mask optimization method of a photoetching machine. According to the method, mask information expressed based on a pixel is converted to a frequency domain through discrete cosine transform, a low-frequency part is cut to be taken as an optimization variable and coded into particles, the sum of squared difference of each point between an ideal graph and a photoresist image corresponding to the current mask is taken as an evaluation function, and a mask graph is optimized by a particle swarm optimization algorithm. With the optimization method, the imaging quality of a photoetching system can be effectively improved, the optimization method has the advantages of simplicity in principle and relatively fast convergence speed, and is easy to implement, and the manufacturability of the optimized mask is high.

Description

technical field [0001] The invention relates to a photolithography machine, in particular to a method for optimizing the mask of a photolithography machine. Background technique [0002] Photolithography is one of the most important steps in the manufacture of very large-scale integrated circuits, and the resolution of photolithography determines the feature size of integrated circuit graphics. When the exposure wavelength and numerical aperture are fixed, it is necessary to reduce the process factor and improve the photolithographic resolution by improving the photoresist process and adopting resolution enhancement technology. Mask optimization is an important resolution enhancement technology, which mainly includes Optical Proximity Correction (hereinafter referred to as OPC) and inverse lithography technology (Inverse Lithography Technology, hereinafter referred to as ILT). Among them, ILT regards mask design as a reverse mathematical problem, and calculates the entire d...

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Application Information

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IPC IPC(8): G03F7/20
CPCG03F7/70433G03F7/70508
Inventor 王磊王向朝李思坤杨朝兴
Owner SHENZHEN JINGYUAN INFORMATION TECH CO LTD
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