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Rare earth scintillation crystal prepared from low-cost rare earth raw materials and low-cost growth process of rare earth scintillation crystal

A technology of scintillation crystal and crystal growth, which is applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., and can solve problems hindering the application in the detection field

Active Publication Date: 2016-05-04
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the expensive cost of rare earth scintillation crystals has become a shackle in its application field, and has hindered further wider application in the field of detection. How to reduce production costs and obtain low-cost rare earth scintillation crystals and their growth process has become an issue. Problems to be solved urgently by frontier scholars in the field of application

Method used

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  • Rare earth scintillation crystal prepared from low-cost rare earth raw materials and low-cost growth process of rare earth scintillation crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] According to the above raw material preparation process, the trivalent cerium ion-doped yttrium lutetium silicate crystal polycrystalline raw material is prepared. The high temperature solid phase reaction is as follows:

[0077] 2xO 2 +yY 2 o 3 +(1-x-y)Lu 2 o 3 +SiO2 2 →(Ce x Lu 1-x-y Y y ) 2 SiO 5 +1 / 2O 2 ↑

[0078] Lu with a purity of 99.9% 2 o 3 , Y 2 o 3 , CeO 2 and SiO 2 , after three-stage series crystallization, Lu with a purity greater than 99.995% was obtained 2 o 3 , Y 2 o 3 , CeO 2 and SiO 2 High-purity raw materials, according to (CeYLu) 2 o 3 :SiO2 2 = 1.1, CeO 2 :( 2 o 3 +Lu 2 o 3 )=0.01, Y 2 o 3 :Lu 2 o 3 =0.18 Proportioning Accurately weigh 2400g, put into the mixer after batching and fully mix for 28 hours, so that the raw materials are evenly mixed. Press the raw material cake under 30MPa, put the raw material cake into the high-purity crucible, and then put it into a part of the reducing atmosphere N 2 +H 2Sinter...

Embodiment 2

[0083] According to the above raw material preparation process, the trivalent cerium ion-doped yttrium lutetium silicate crystal polycrystalline raw material is prepared. The high temperature solid phase reaction is as follows:

[0084] 2xO 2 +yY 2 o 3 +(1-x-y)Lu 2 o 3 +SiO2 2 →(Ce x Lu 1-x-y Y y ) 2 SiO 5 +1 / 2O 2 ↑

[0085] Lu with a purity greater than 99.995% 2 o 3 , Y 2 o 3 , CeO 2 , SiO 2 High-purity raw materials according to (CeYLu) 2 o 3 :SiO2 2 =0.85, CeO 2 :( 2 o 3 +Lu 2 o 3 )=0.008, Y 2 o 3 :Lu 2 o 3 =0.15 Proportioning Accurately weigh 2400g, put into the mixer after batching and fully mix for 28 hours, so that the raw materials are evenly mixed. Press the raw material cake under 30MPa, put the raw material cake into the high-purity crucible, and then put it into a part of the reducing atmosphere N 2 +H 2 Sintering at 1100°C under protection to form a polycrystalline block. The cerium-doped yttrium-lutetium silicate crystal is direc...

Embodiment 3

[0088] According to the above raw material preparation process, the gadolinium lutetium silicate crystal polycrystalline raw material doped with trivalent cerium ions is prepared. The high temperature solid phase reaction is as follows:

[0089] 2xO 2 +yGd 2 o 3 +(1-x-y)Lu 2 o 3 +SiO2 2 →(Ce x Lu 1-x-y Gd y ) 2 SiO 5 +1 / 2O 2 ↑

[0090] Lu with a purity greater than 99.99% 2 o 3 、Gd 2 o 3 , CeO 2 , SiO 2 High-purity raw materials according to (CeGdLu) 2 o 3 :SiO2 2 =1.15, CeO 2 :( 2 o 3 +Lu 2 o 3 )=0.03, Gd 2 o 3 :Lu 2 o 3 =0.15 Proportioning Accurately weigh 5500g, put into a mixer and mix thoroughly for 48 hours after batching, so that the raw materials are evenly mixed. Press the raw material cake under 55MPa, put the raw material cake into the high-purity crucible, and put it into the partial reducing atmosphere N 2 +H 2 Sintering at 1100°C under protection to form a polycrystalline block. Directional pulling and growth of cerium-doped yttri...

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Abstract

The invention provides a low-cost rare earth scintillation crystal. The rare earth scintillation crystal is prepared from RE2O3, silicon dioxide, cerium oxide and lutecium oxide through crystal growth; the ratio of the sum of mass of RE2O3, cerium oxide and lutecium oxide to mass of silicon dioxide is (0.75-1.25): 1; the ratio of mass of cerium oxide to the sum of mass of RE2O3 and lutecium oxide is (0.005-0.04): 1; the mass ratio of RE2O3 to lutecium oxide is (0.005-1): 1. The ratio of raw materials is determined in accordance with relationship between composition and the temperature in a crystal growth congruent melting region; the liquid / solid phase change temperature point in the scintillation crystal growth process can be effectively lowered by adopting the special raw material ratios, energy consumption and precious metal consumption for crystal growth are reduced, shortening of growth time is facilitated due to the rapid growth process, the crystal yield is high, and the apparent low-cost advantage is achieved.

Description

technical field [0001] The invention relates to the technical field of scintillation crystal materials, in particular to a rare earth scintillation crystal prepared from low-cost rare earth raw materials and a low-cost growth process. Background technique [0002] Scintillation crystals refer to crystals that can convert the kinetic energy of high-energy particles into light energy and emit flashes under the impact of high-energy particles such as X-rays and radiation. Scintillation, on the other hand, refers to a radioluminescent process that converts high-energy rays or particles into pulses of ultraviolet or visible fluorescence. The main application fields of scintillation crystals are high energy physics, nuclear physics, nuclear medicine (such as XCT, PET and g camera), industrial application (industrial CT), geological exploration, oil well logging, etc. Scintillation crystals can emit light waves in the visible light band under the excitation of rays. The maximum sc...

Claims

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Application Information

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IPC IPC(8): C30B29/34C30B15/36C09K11/79
CPCC09K11/7774C30B15/36C30B29/34
Inventor 薛冬峰孙丛婷
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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