Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ultra-wideband quasi-open slow-wave structure

A slow-wave structure and ultra-broadband technology, applied in the field of slow-wave structures, can solve the problems of large depth-to-depth ratio of the structure, increased processing difficulty, dispersion of longitudinal electric field distribution, etc., and achieves low tuning operating voltage, low processing difficulty, and large coupling impedance. Effect

Inactive Publication Date: 2016-04-20
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, with the increase of the broadside of the sine wave slow wave structure, the longitudinal electric field distribution of this slow wave structure will become more dispersed, resulting in a very small average coupling impedance in the band-shaped electron beam passing region, making the return wave oscillator It is difficult to vibrate, and the interaction efficiency is low; at the same time, due to the increase of the broad side, the depth ratio of the structure becomes larger, resulting in an increase in the difficulty of microfabrication

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultra-wideband quasi-open slow-wave structure
  • Ultra-wideband quasi-open slow-wave structure
  • Ultra-wideband quasi-open slow-wave structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] Specific embodiments of the present invention will be described below in conjunction with the accompanying drawings, so that those skilled in the art can better understand the present invention. It should be noted that in the following description, when detailed descriptions of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.

[0028] In this example, if figure 1 As shown, the ultra-broadband quasi-open slow wave structure of the present invention includes two identical metal plates 1 with a broadside length a, located on the upper and lower sides, separated by a distance b, and a longitudinal length of l, which are located at the same position in the vertical direction.

[0029] At the same time, load the width R on the lower side of the upper metal plate and the center position of the upper side of the lower metal plate in the width direction. w , the height is R h A strip-shaped metal ridge 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an ultra-wideband quasi-open slow-wave structure comprising two identical metal plates and supporting metal walls or mediums on the two sides. The center positions on the broad edges of the lower side of the upper metal plate and the upper side of the lower metal plate are each loaded with a striped metal ridge with periodic ups and downs along the longitudinal direction, wherein the width is Rw, the height is Rh, and the cycle length of the ups and downs is p. Thus, a striped electron beam channel is formed in the space between the striped metal ridges, and the height hb is the difference between the difference b of the metal plates and two times of ridge height Rh. The slow-wave structure has a natural electron beam channel, requires no additional processing, is of low processing difficulty and large coupling impedance, and is very beneficial to oscillation starting of a backward wave oscillator. The slow-wave structure is of low low-end cut-off frequency, and has the characteristics of ultra wideband and small high-frequency transmission reflection.

Description

technical field [0001] The invention belongs to the technical field of vacuum electronics, and more specifically relates to an ultra-broadband quasi-open slow wave structure suitable for working in a terahertz band return wave tube. Background technique [0002] Terahertz (THz for short) usually refers to electromagnetic waves with a frequency of 0.1-10 THz (wavelength of 0.03-3 mm), which is located between infrared and microwave. Due to its special position in the electromagnetic spectrum, terahertz science and technology is currently a very important interdisciplinary frontier field. The unique properties of terahertz waves make it have broad practical prospects in the fields of basic research in biology, medicine, physics, chemistry, and electronic information, as well as in technical fields such as material research, communication information, environmental science, spectroscopy, and national security. and important scientific research value. At the same time, teraher...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01J23/24H01J23/28
CPCH01J23/24H01J23/28
Inventor 张鲁奇魏彦玉徐进赵国庆王战亮宫玉彬王文祥
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products