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Manufacturing method of water and oxygen barrier layer

A technology of water-oxygen barrier layer and barrier layer, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems such as unfavorable industrialization development, increased difficulty in film preparation, and increased cost of OLED device preparation. Reduce the water oxygen transmission rate, improve the barrier effect, and have a wide range of applications

Active Publication Date: 2016-03-30
SHANGHAI UNIV
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Different film deposition methods have different deposition principles, and the limits of barrier properties that can be achieved are also different. The amount of water vapor permeation channels formed is an important factor that determines the barrier effect. Therefore, reducing the formation of water vapor channels or changing the original Mismatching the form of the water vapor pathway is an effective way to enhance the barrier performance, but in order to achieve this goal, the difficulty of traditional film preparation is increased, and even denser film-forming materials need to be replaced, which leads to the cost of OLED device preparation. Improvement is not conducive to the development of industrialization

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  • Manufacturing method of water and oxygen barrier layer
  • Manufacturing method of water and oxygen barrier layer
  • Manufacturing method of water and oxygen barrier layer

Examples

Experimental program
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Effect test

Embodiment 1

[0036] In this example, see Figure 1~3 , a method for preparing a water-oxygen barrier layer, adopting a magnetron sputtering method to sequentially sputter metal Al on a PI flexible substrate to prepare two layers of barrier material film layers to form a water-oxygen composite double-layer mismatch barrier layer. In the preparation process of the barrier material film layer, the first layer of barrier material film layer is prepared using the first set of parameters, and the second layer of barrier material film layer changes some parameters that affect the properties and structure of the film layer, and continues to deposit, thus preparing A double-mismatched barrier layer was developed.

[0037] In this embodiment, the substrate is a PI flexible substrate, and the sputtering material is pure Al. The specific method for preparing the double-layer mismatched barrier layer is as follows: first clean the PI flexible substrate, and then heat the PI flexible substrate on the su...

Embodiment 2

[0040] This embodiment is basically the same as Embodiment 1, especially in that:

[0041] In this example, see Figure 4 and Figure 5 , using the magnetron sputtering method to sequentially use three different parameters to sputter metal Al on the PI flexible substrate to prepare three layers of barrier material film layers to form a water-oxygen composite multilayer mismatch barrier layer. In the preparation process of the barrier material film layer, the first layer of barrier material film layer is prepared using the first set of parameters, and the second layer of barrier material film layer changes some parameters that affect the properties and structure of the film layer, and continues to deposit; the third layer The barrier material film layer changes some parameters that affect the properties and structure of the film layer, and continues to deposit, thus preparing a three-layer mismatched barrier layer;

[0042] In this embodiment, the substrate is a PI flexible s...

Embodiment 3

[0044] This embodiment is basically the same as the previous embodiment, and the special features are:

[0045] In this example, see Figure 6 , a method for preparing a water-oxygen barrier layer, using atomic layer deposition method, sequentially depositing Al on a PI flexible substrate 2 o 3 A multi-layer barrier material film layer is prepared to form a water-oxygen composite multi-layer mismatch barrier layer. This example is an expansion of the mismatch method in the preparation of barrier films, without destroying the vacuum environment. When changing the special parameters such as the reaction gas flow ratio and the type of precursor, the type of the product is not changed, but the product is significantly changed. The structural properties of the thin film layer, in this embodiment, use the same kind of material with the same type but different properties to form the film layer, so as to achieve the effect of water vapor passage mismatch, which is also one of the im...

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Abstract

The invention discloses a manufacturing method of a water and oxygen barrier layer. At least two thin film layers are successively manufactured on a substrate to form a water and oxygen composite barrier layer. When each thin film layer is manufactured, manufacturing parameters of at least two any adjacent thin film layers, which are provided and selected during manufacturing, are different so that each thin film layer in the water and oxygen composite barrier layer forms a disconnected mismatch structure of a water and oxygen microchannel. A plurality of thin film layers are manufactured on the substrate to form the water and oxygen composite barrier layer. Through adjusting one or more parameters influencing film deposition, the films can grow with different structures, different properties and even different growth modes so that a water vapor pathway in a previous film layer and a water vapor pathway in a next film layer are mismatched. The water vapor pathways which can not be connected can not conduct the water and oxygen in atmosphere so that water and oxygen barrier performance of the thin films is increased. The method is simple and easy to use. In future industrial production of a flexible display barrier layer, the method possesses considerable popularization potential.

Description

technical field [0001] The invention relates to a preparation method of a microelectronic device, in particular to a preparation method of an external water-oxygen barrier structure part of a microelectronic device, which is applied to the technical field of waterproofing and external sealing of a microelectronic device. Background technique [0002] Compared with inorganic electroluminescent devices, organic electroluminescent devices (OrganicLightEmittingDevice, OLED) have a wide range of material selection, can realize full-color display from blue light region to red light region, low driving voltage, high luminous brightness and luminous efficiency, Wide viewing angle, fast response speed, relatively simple production process, low cost, and flexible display can be realized. Therefore, it has developed rapidly in the past 20 years, and related industries are already in the initial stage of industrialization. Organic electroluminescence Devices are generally considered to ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/00
Inventor 张建华张帅陈龙龙
Owner SHANGHAI UNIV
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