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Photoresist cleaning composition

A technology for cleaning composition and photoresist, applied in the direction of photosensitive material processing, etc., can solve the problems of chip corrosion and damage, frequent replacement of cleaning solution, inability to completely remove photoresist, etc., and achieve the effect of avoiding interference and strong cleaning ability

Inactive Publication Date: 2016-02-03
BEIJING ZHONGKEZIXIN TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Improve the cleaning method of photoresist mainly by prolonging the immersion time, increasing the immersion temperature and using a strong corrosive solution, which is very easy to cause corrosion and damage to the chip
At the same time, the cleaning fluid needs to be changed frequently
In addition, the concentrated sulfuric acid used in the prior art can only remove the surface layer of the photoresist, but cannot completely remove the photoresist.

Method used

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  • Photoresist cleaning composition

Examples

Experimental program
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Effect test

Embodiment 1

[0014] The photoresist cleaning composition comprises the following components by weight: 1% methyl benzyl alcohol, 0.3% polyoxypropylene triol, 5% nonyl polyoxyethylene ether, 2.4% methyl p-aminobenzoate, and Tea phenol 0.6%, JFC-21%, N-N dimethylformamide 10% and ethylene glycol monomethyl ether 79.7%.

Embodiment 2

[0016] The photoresist cleaning composition comprises the following components in parts by weight: dimethyl benzyl alcohol 2%, polyoxypropylene triol 0.1%, nonyl polyoxyethylene ether 6%, methyl p-aminobenzoate 2.4%, Catechol 0.6%, JFC-21%, N-N dimethylformamide 15% and ethylene glycol monomethyl ether 72.9%.

Embodiment 3

[0018] The photoresist cleaning composition comprises the following components by weight: 1.5% dimethyl benzyl alcohol, 0.2% polyoxypropylene triol, 6% nonyl polyoxyethylene ether, 2% methyl p-aminobenzoate, Catechol 1%, JFC-21%, N-N dimethylformamide 18% and ethylene glycol monomethyl ether 70.3%.

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PUM

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Abstract

The invention discloses a photoresist cleaning composition. The cleaning composition comprises DL-1-phenethylalcohol or benzenemethanol, polypropylene oxide triol, polyoxy ethylene nonyl phenyl ether and an organic solvent. The cleaning composition also comprises a corrosion inhibitor 4-aminobenzoic acid methyl ester, catechol and an osmotic agent JFC-2. The composition has a good cleaning capability for the photoresist, and simultaneously the composition does not erode the chip base material; the composition is very suitable for industrial production as well as large scale popularization and application.

Description

technical field [0001] The application belongs to the technical field of semiconductor manufacturing, and in particular relates to a photoresist cleaning composition. Background technique [0002] The prototype of the gene chip (genechip) was proposed in the mid-1980s. The sequencing principle of the gene chip is the method of hybridization sequencing, that is, the method of determining the nucleic acid sequence by hybridizing with a set of nucleic acid probes of known sequence. The photolithography process is a conventional process used in the manufacture of integrated circuits, liquid crystal display screens and gene chips, etc., and photoresist is a necessary material in the photolithography process. Photoresist, also known as photoresist, is a light-sensitive mixed liquid composed of three main components: photosensitive resin, sensitizer and solvent. The photoresist should have relatively low surface tension, so that the photoresist has good fluidity and coverage. Af...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 陈哲任鲁风殷金龙
Owner BEIJING ZHONGKEZIXIN TECH
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