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Preparation method of etching fluid for liquid crystal displayers

A technology of liquid crystal display and etching solution, which is applied in the field of preparation of etching solution for liquid crystal display, can solve the problems of poor etching effect of metal wiring, rough surface of chromium metal film, shedding of photoresist, etc., and achieve an etching speed Controllability, improvement of etching effect, effect of reducing surface tension

Inactive Publication Date: 2016-02-03
WUXI IMPRINT NANO TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main disadvantages of this type of etching solution for etching chromium metal films are: the etching speed is slow, causing the photoresist to be soaked in the etching solution for a long time, which will cause part of the photoresist to fall off and cause some metal wiring to be damaged. The etching effect is not good; there are also etching marks on the interface between the anti-corrosion coating and the chromium metal film that do not need to be etched due to the infiltration of the etching solution, resulting in rough surface of the chromium metal film that does not need to be etched

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The preparation method of above-mentioned liquid crystal display etchant, comprises the steps:

[0018] The first step: the strong acidic cation exchange resin is joined in the weight percent is 1.5% organic hydrochloric acid, stirs and mixes, and the speed of stirring is 75 revs / min, and stirring time is 12 minutes, then filter out the strong acidic cation exchange resin, control or Remove impurity ions in organic hydrochloric acid;

[0019] The second step: put 0.5% cerium ammonium nitrate and 1 / 5 distilled water into the reaction kettle, fully stir at normal temperature and pressure, the stirring time is 5 minutes, and the stirring speed is 55 rpm;

[0020] The third step: then add 0.2% o-fluorobenzoic acid by weight and stir for 3 minutes; add 1.2% by weight of n-valeric acid and stir for 4 minutes; add 1 / 5 of distilled water and stir for 3 minutes Add 1.2% iodic acid by weight, fully stir for 3 minutes; add 1.5% organic hydrochloric acid, fully stir for 4 minutes;...

Embodiment 2

[0027] The preparation method of above-mentioned liquid crystal display etchant, comprises the steps:

[0028] The first step: the strong acidic cation exchange resin is joined in the organic hydrochloric acid of 1.9% by weight, stirring and mixing, the stirring speed is 82 rev / min, the stirring time is 17 minutes, then filter out the strong acidic cation exchange resin, control or Remove impurity ions in organic hydrochloric acid;

[0029] The second step: put 1.5% by weight of cerium ammonium nitrate and one-fifth of distilled water into the reactor, fully stir at normal temperature and pressure, the stirring time is 8 minutes, and the stirring speed is 60 rpm;

[0030] The third step: then add 1.2% by weight o-fluorobenzoic acid, fully stir for 4 minutes; add 1.9% by weight of n-valeric acid, fully stir for 5 minutes; add 1 / 5 of distilled water, fully stir for 4 minutes Add 2.0% iodic acid by weight, fully stir for 3.5 minutes; add 1.5% organic hydrochloric acid, fully sti...

Embodiment 3

[0037] The preparation method of above-mentioned liquid crystal display etchant, comprises the steps:

[0038] The first step: the strong acidic cation exchange resin is joined in the organic hydrochloric acid of 2.3% by weight, stirring and mixing, the stirring speed is 90 rpm, and the stirring time is 20 minutes, then filter out the strong acidic cation exchange resin, control or Remove impurity ions in organic hydrochloric acid;

[0039] The second step: put 2.3% by weight of ceric ammonium nitrate and one-fifth of distilled water into the reactor, fully stir at normal temperature and pressure, the stirring time is 10 minutes, and the stirring speed is 65 rpm;

[0040]The third step: then add 1.8% by weight of o-fluorobenzoic acid and stir for 5 minutes; add 2.6% by weight of n-valeric acid and stir for 6 minutes; add 1 / 5 of distilled water and stir for 5 minutes Add the iodic acid of 2.6% by weight, fully stir for 4 minutes; add the organic hydrochloric acid of 2.3% by we...

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PUM

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Abstract

The invention discloses a preparation method of etching fluid for liquid crystal displayers. The etching fluid includes, by weight percentage, 0.5%-2.3% of ceric ammonium nitrate, 0.2%-1.8% of o-fluorobenzoic acid, 1.2%-2.6% of n-pentanoic acid, 1.2%-2.6% of iodic acid, 1.5%-2.3% of hydrochloric acid, 2.5%-3.3% of non-ionic surface active agents, 1.5%-2.6% of antifoaming agents and the balance distilled water. Due to the fact that the ceric ammonium nitrate, o-fluorobenzoic acid, n-pentanoic acid, iodic acid and hydrochloric acid are added on the basis of the prior art, etching can be performed without permeation of an etch-resistant coating, the etching speed of a chromium metal film is remarkably increased, the etching speed is controllable, an etch-resistant protective layer is effectively restrained from degrading, a chromium metal film wire with a flat and smooth surface is obtained, and the preparation method has significant application value.

Description

technical field [0001] The invention relates to a preparation method of an etching solution for a liquid crystal display. Background technique [0002] Thin film transistor liquid crystal display (TFT-LCD) is widely used in notebook computers, LCD TVs, etc. By more and more users of all ages. Thin film transistor is a key device in thin film transistor liquid crystal display, and its performance has a decisive effect on the performance of the final liquid crystal display product. The manufacturing process is to manufacture different thin films on the glass substrate according to the optical and electrical characteristics of the device, and process the different thin films according to the design requirements to form a regularly arranged specific electronic device - thin film transistor array. The main process of thin film transistor array manufacturing includes basic steps such as substrate cleaning, film formation, photolithography, inspection and repair. The core proces...

Claims

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Application Information

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IPC IPC(8): C23F1/26
Inventor 王晶肖延安杨彦清赵敏洁
Owner WUXI IMPRINT NANO TECH
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