Underfill material and method for manufacturing semiconductor device using same
An underfill material and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of non-Bingham fluidity, insufficient air removal, etc., and achieve good performance Effect of Solder Bondability
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[0067] In addition, this technology can also be applied to TSV (Through Silicon Via: Through Silicon Via) technology that electrically connects a plurality of chip substrates stacked in a sandwich shape by filling small holes provided in a semiconductor chip with metal.
[0068] That is, it can also be applied to a semiconductor device in which a plurality of chip substrates are stacked having a first surface on which an electrode with solder is formed and a second surface on which a counter electrode opposite to the electrode with solder is formed on the opposite side of the first surface. Manufacturing method.
[0069] In this case, the underfill film is mounted on the second surface of the second chip substrate with the underfill film attached to the first surface side of the first chip substrate. Then, the first surface of the first chip substrate and the second surface of the second chip substrate are thermocompression bonded at a temperature equal to or higher than the m...
Embodiment
[0071]
[0072] Hereinafter, examples of the present invention will be described. In this example, a pre-feed type underfill film was produced, and the dynamic viscoelasticity measurement was performed. Then, an IC chip having electrodes with solder and an IC substrate having electrodes opposed thereto were connected to each other using an underfill film to produce a package, and voids and solder joint states were evaluated. In addition, this invention is not limited to these Examples.
[0073] The dynamic viscoelasticity measurement, fabrication of the package, evaluation of voids, and evaluation of solder joints were performed as follows.
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