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Preparation method of vertically aligned hafnium disulfide nanosheets by chemical vapor deposition

A chemical vapor deposition and hafnium disulfide technology, which is applied in the field of chemical vapor deposition preparation of hafnium disulfide nanosheets, can solve the problems of no hafnium disulfide nanosheets, no hafnium disulfide materials, etc., and achieves good uniformity, The effect of high surface activity and large area

Active Publication Date: 2017-12-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is no Chinese patent report related to the preparation of hafnium disulfide materials, let alone the Chinese patent report related to the preparation of vertically aligned hafnium disulfide nanosheets

Method used

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  • Preparation method of vertically aligned hafnium disulfide nanosheets by chemical vapor deposition
  • Preparation method of vertically aligned hafnium disulfide nanosheets by chemical vapor deposition
  • Preparation method of vertically aligned hafnium disulfide nanosheets by chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1) The silicon dioxide / silicon substrate was ultrasonically cleaned with deionized water, acetone, and ethanol for 2 minutes respectively, then rinsed with deionized water, and finally dried with nitrogen.

[0032] (2) Place the silicon dioxide / silicon substrate in the central temperature zone of the quartz tube 2 of the vacuum tube furnace 1 . Weigh 200mg of sulfur powder and 100mg of hafnium tetrachloride powder (purity not less than 99.9%) into the quartz boat 3, and then place them in two small quartz tubes 4 respectively, and the small quartz tubes 4 are placed in the tube furnace Outside the heating zone, external winding heating tape 5, such as figure 1 shown.

[0033] (3) Evacuate the vacuum tube furnace to a high vacuum with a molecular pump, so that the pressure in the tube furnace is reduced to 10 -3 Pa, argon gas and hydrogen gas are introduced at a rate of 10 sccm, and the pressure in the chamber is maintained at 18 Pa.

[0034] (4) Raise the central te...

Embodiment 2

[0039] (1) The sapphire substrate was ultrasonically cleaned with deionized water, acetone, and ethanol for 2 minutes respectively, then rinsed with deionized water, and finally dried with nitrogen.

[0040] (2) Place the sapphire substrate in the central temperature zone of the quartz tube 2 of the vacuum tube furnace 1 . Weigh 300mg of sulfur powder and 100mg of hafnium tetrachloride powder (purity not less than 99.9%) and put them into the quartz boat 3, then place them in two small quartz tubes 4 respectively, and place the small quartz tubes 4 in the tube furnace Outside the heating zone, external winding heating tape 5, such as figure 1 shown.

[0041] (3) Evacuate the vacuum tube furnace to a high vacuum with a molecular pump, so that the pressure in the tube furnace is reduced to 10 -3 Pa, argon gas and hydrogen gas are introduced at a rate of 10 sccm, and the pressure in the chamber is maintained at 18 Pa.

[0042] (4) Raise the central temperature zone of the tube...

Embodiment 3

[0047](1) The graphene substrate (graphene transferred to silicon oxide / silicon) was ultrasonically cleaned with deionized water, acetone, and ethanol for 2 minutes, then rinsed with deionized water, and finally dried with nitrogen.

[0048] (2) The graphene substrate is placed in the central temperature zone of the quartz tube 2 of the vacuum tube furnace 1 . Weigh 400mg of sulfur powder and 100mg of hafnium tetrachloride powder (purity not less than 99.9%) into the quartz boat 3, then place it in two small quartz tubes 4, and place the small quartz tubes 4 in a tube furnace for heating area outside, externally wound heating tape 5, such as figure 1 shown.

[0049] (3) Evacuate the vacuum tube furnace to a high vacuum with a molecular pump, so that the pressure in the tube furnace is reduced to 10 -3 Pa, argon gas and hydrogen gas are introduced at a rate of 10 sccm, and the pressure in the chamber is maintained at 18 Pa.

[0050] (4) Raise the central temperature zone of ...

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Abstract

The invention discloses a method for preparing vertically arranged hafnium disulfide nanosheets by chemical vapor deposition, which comprises the following steps: (1) cleaning the substrate; (2) putting the substrate, sulfur powder and hafnium tetrachloride powder into a vacuum tube (3) Evacuate the vacuum tube furnace to a high vacuum, and feed in argon and hydrogen; (4) Heat up, keep warm, and cool down the tube furnace in sequence; (5) Take out the substrate, and the substrate is vertically arranged hafnium disulfide nanosheets; the vertically arranged hafnium disulfide nanosheets prepared by the present invention have good uniformity, high quality, and large area, and are useful for the basic research of hafnium disulfide nanomaterials and the potential application of related two-dimensional nano-optoelectronic devices A reliable method for sample preparation is provided, and the vertically arranged nanostructures have large specific surface area and high surface activity, and have broad application prospects as catalysts.

Description

technical field [0001] The invention relates to the field of preparation of novel two-dimensional nanometer materials, in particular to a method for preparing vertically arranged hafnium disulfide nanosheets by chemical vapor deposition. Background technique [0002] In order to make up for the lack of applications of zero-bandgap graphene in the fields of semiconductor electronics and optoelectronics, two-dimensional nanostructures of transition metal chalcogenides with a fairly wide bandgap have received great attention. The preparation, optical properties, electrical properties and applications of VIB group transition metal chalcogenides represented by molybdenum disulfide and tungsten disulfide have been extensively studied and have shown excellent performance. However, there are few reports on group IVB transition metal chalcogenides such as hafnium disulfide and zirconium disulfide, but these materials can possess higher electrical properties. Theoretical calculations...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/22C04B41/50
Inventor 陈远富郑斌杰李萍剑戚飞刘竞博贺加瑞张万里
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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