Method for optimizing dynamic response performance of heat radiator of power device on basis of numerical iteration

Abstract

The invention provides a method for optimizing the dynamic response performance of a heat radiator of a power device on the basis of numerical iteration. The method comprises the following steps of: a, building an integral Foster heat network model; b, obtaining a power circulation temperature curve according to the total response and the zero input response of the Foster heat network model; and c, building a heat radiator numeralization module through the power circulation temperature curve, and obtaining a heat network parameter of a physical heat radiator. The method has the advantages that the dynamic response performance of the heat radiator can be optimized; and the power circulation speed in an aging test is accelerated, or the junction temperature fluctuation amplitude in the actual use process is reduced, and the junction temperature fluctuation speed in the actual use process is decelerated, so that the requirement of power circulation speed regulation in different application occasions can be met. The test speed can be effectively accelerated. The junction temperature fluctuation can be effectively reduced when the method is applied to current converter external heat management.

Description

technical field [0001] The invention relates to the field of electronics, in particular to a method for optimizing the dynamic response performance of a heat sink of a power device based on numerical iteration. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor). The reliability of the inverter is of vital significance. Theoretically, the design life of the IGBT is generally more than 30 years, but in practical applications, the IGBT needs to deal with a large range of random fluctuations in power for a long time, resulting in long-term large fluctuations in the IGBT junction temperature and seriously affecting the IGBT. Service life, in order to explore the failure mechanism of the IGBT module and establish its life prediction model, it is necessary to implement a...

AI Technical Summary

Problems solved by technology

In the existing radiator design methods, only the steady-state thermal performance of the radiator can be analyzed and designed, and there is no effective method for the dynamic response process of the radiator, especially the dynamic response performance analysis in the IGBT power cycle

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