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Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method of light-emitting device

A quantum dot light-emitting and light-emitting device technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of low device efficiency, leakage current, and insufficient density of quantum dots, and solve the problem of efficiency decline , uniform and dense arrangement, and the effect of improving efficiency

Inactive Publication Date: 2015-11-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a light-emitting device with a densely arranged quantum dot light-emitting layer and a preparation method thereof, aiming at solving the phenomenon that the existing quantum dots are not densely arranged and there is leakage current, etc., the device The problem of inefficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] 1) The ITO conductive glass substrate is cleaned with chloroform, acetone and isopropanol in sequence, and then the cleaned ITO conductive glass substrate is treated with ultraviolet ozone plasma.

[0049]2), hole injection layer: MoO 3 (10nm) in high vacuum (1×10 -6 MPa) by thermal evaporation (MoO 3 powder).

[0050] 3), hole transport layer: CuInS 2 Quantum dots were spin-coated in cyclohexane solvent (10 mg / mL) on MoO 3 on, and spin coating at approximately 2000 rpm for 30 seconds. Next, a 20 mM methanol solution of 1,8-octanediamine was heated to 60° C., and then the quantum dot film was immersed in the cross-linking solution and washed with pure methanol solution for 5 min. Then rinsed with isopropanol and dried under nitrogen flow, and then the film was annealed at 180 °C for 30 min in a nitrogen glove box.

[0051] 4), electron injection layer: TiO 2 (40 nm), the titania sol-gel precursor was diluted to 5 wt% in butanol and spin-coated at approximately 20...

Embodiment 2

[0055] 1) The ITO conductive glass substrate is cleaned with chloroform, acetone and isopropanol in sequence, and then the cleaned ITO conductive glass substrate is treated with ultraviolet ozone plasma.

[0056] 2), hole injection layer / hole transport layer: the aqueous solution of PEDOT:PSS used for the hole injection layer is spin-coated on the ITO, and the spin coating is carried out at a speed of about 4000rpm for 60 seconds, and then baked at 140°C Bake for 10 minutes.

[0057] The Poly-TPD used for the spin coating of the hole transport layer was dissolved and diluted to 8mg / mL in chlorobenzene, and the spin coating was carried out at a speed of about 2000rpm for 45 seconds, and then baked at 110°C for 20 minutes.

[0058] 3) Quantum dot light-emitting layer: hydrolyze 3-(methacryloyloxy)propyltrimethoxysilane on the surface of CdTe / CdS quantum dots to prepare SiO with methacryloyl groups at the end 2 Shell stabilized CdTe / CdS / SiO 2 Core-shell quantum dots were config...

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Abstract

The invention discloses a light-emitting device with a compactly arranged quantum dot light-emitting layer and a preparation method of the light-emitting device. Another compound solution with a crosslinking effect is added to the quantum dot light-emitting layer to realize quantum dot surface ligand exchange, so that crosslinking is carried out, or ultraviolet or thermocuring crosslinking is carried out on a quantum dot light-emitting layer solution to obtain the quantum dot light-emitting layer. Through crosslinking treatment of quantum dots, the prepared quantum dots are arranged uniformly and compactly; the defects such as pinholes or cracks are avoided; and leakage current is avoided, so that the problems such as impure spectrums due to the fact that the efficiency of a quantum dot light-emitting diode is reduced or other adjacent charge transfer layers emit light are effectively solved; and the radiative recombination luminous efficiency can be improved to improve the efficiency of the quantum dot light-emitting diode.

Description

technical field [0001] The invention relates to the technical field of QLED light-emitting devices, in particular to a light-emitting device with densely arranged quantum dot light-emitting layers and a preparation method thereof. Background technique [0002] QLED light-emitting devices are light-emitting devices that use colloidal quantum dots as the light-emitting layer and are prepared with a sandwich structure, that is, light-emitting layers are introduced between different conductive materials to obtain light of required wavelengths. And by changing the size of the quantum dots in the light-emitting layer, light-emitting devices that radiate different colors can be prepared, and the light-emitting device has a narrow spectral range, and the half-maximum width of the spectrum can reach 30nm. Compared with organic light-emitting devices, on the one hand, the luminous color of QLED can be adjusted with the size of quantum dots; on the other hand, due to the narrow half-wi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H01L51/50H01L51/56H10K99/00
CPCH10K71/12H10K50/115H10K71/00
Inventor 李雪付东
Owner TCL CORPORATION
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