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Semiconductor device, manufacturing method thereof and electronic device

A technology of electronic devices and semiconductors, applied in semiconductor/solid-state device components, manufacturing microstructure devices, microstructure devices, etc., can solve problems in the patterning of metal bonding layers, patterns cannot be transferred and transferred well, etc.

Active Publication Date: 2015-11-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In the process of pressure sensor preparation, contact plugs need to be formed in the process of metal interconnection, and the metal bonding layer is then patterned after the formation of contact plugs, but it is found that the pattern cannot be transferred and transmitted well in this process. , the phenomenon that the metal bonding layer is removed, because the metal bonding layer has a specific color, it is found that the color elimination phenomenon (discolor) occurs on the chip when viewed as a whole, indicating that the metal bonding layer in this process There is a problem with the patterning of

Method used

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  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device
  • Semiconductor device, manufacturing method thereof and electronic device

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preparation example Construction

[0044] Current methods of fabricating semiconductor devices such as Figures 1a-1f As shown, firstly a substrate 101 is provided, a CMOS device is formed in the substrate 101, a first dielectric layer is formed on the substrate, and a metal interconnection structure 102 is formed in the first dielectric layer, and then Depositing a second dielectric layer 103 on the first dielectric layer, and patterning the second dielectric layer 103 to form an annular opening 10, exposing the metal interconnection structure 102, such as Figure 1a shown.

[0045]Next, deposit a metal bonding layer 104 to cover the second dielectric layer 103 and the exposed metal interconnection structure 102, and form the metal bonding layer 104 on the sidewall and bottom of the opening 10, The metal bonding layer 104 can be selected from metal Ti, such as Figure 1b shown.

[0046] Conductive material 105 is then deposited in the opening 10 to fill the opening 10, as Figure 1c As shown, the conductive...

Embodiment 1

[0052] In order to solve the problems in the prior art, the present invention provides a method for preparing a semiconductor device, such as Figures 2a-2g As shown, the method will be further described below in conjunction with the accompanying drawings.

[0053] First, step 201 is performed to provide a substrate 201 in which components, a metal interconnection structure 202 and a dielectric layer 203 are sequentially formed.

[0054] Specifically, such as Figure 2a As shown, a base is provided first, and the base includes at least a semiconductor substrate, wherein the semiconductor substrate can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator ( SSOI), silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0055] Various active devices are formed on the semiconductor substrate, for example, CMOS devices, components of pressure sensors, and ot...

Embodiment 2

[0105] The present invention also provides a semiconductor device, which is prepared by the method described in Embodiment 1, and the semiconductor device includes a pressure sensor. In the method of the present invention, the metal bonding layer will not be damaged during the etching process in the formation of the semiconductor device, and it can accurately realize the transfer of the pattern in the subsequent patterning process, which improves the performance and good quality of the semiconductor device. Rate.

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Abstract

The invention relates to a semiconductor device, a manufacturing method thereof and an electronic device. The method comprises the following steps: S1, providing a substrate, wherein a component, a metal interconnection structure and a dielectric layer are formed in sequence on the substrate; S2, patterning the dielectric layer in order to form an opening for exposing the metal interconnection structure; S3, depositing a metal bonding layer in order to partially fill the opening while covering the dielectric layer; S4, forming an etching stop layer on the metal bonding layer in order to cover the metal bonding layer; S5, depositing a conductive material layer in order to fill the opening and cover the etching stop layer; S6, etching the conductive material layer back onto the etching stop layer in order to form a contact plug; and S7, patterning the etching stop layer and the metal bonding layer in order to form a second opening for exposing the dielectric layer. Through adoption of the semiconductor device, the manufacturing method thereof and the electronic device, damage to the metal bonding layer is avoided, and patterning can be realized smoothly in a subsequent process.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular, the present invention relates to a semiconductor device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, smart phones, integrated CMOS and micro-electro-mechanical systems (MEMS) devices have increasingly become the most mainstream and advanced technologies in the market for sensor (motion sensor) products, and with technology updates, The development direction of this kind of sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Micro-electro-mechanical systems (MEMS) have obvious advantages in terms of volume, power consumption, weight, and price. So far, a variety of different sensors have been developed, such as pressure sensors, acceleration sensors, inertial sensors, and other sensors. [0004] In the process of pressure sensor prepa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/02
Inventor 伏广才李华乐刘庆鹏
Owner SEMICON MFG INT (SHANGHAI) CORP
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