Method for preparing high-purity silicon thin film by electrolyzing SiO2 at low temperature through ionic liquid
An ionic liquid and silicon thin film technology, applied in the field of materials, can solve the problems of poor conductivity, high process energy consumption, slow reduction rate, etc., and achieve the effects of reducing the thickness of silicon wafers, shortening the process flow, and reducing production energy consumption.
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Embodiment 1
[0047] Low temperature electrolysis of SiO using ionic liquid 2 The structure of the high-purity silicon thin film device is as follows figure 1 As shown, including the electric heating jacket 7 and its internal electrolytic cell 10; the electric heating jacket 7 is provided with a thermocouple 5, and the electrolytic cell cover 4 on the top of the electrolytic cell 10 is provided with an inert gas inlet 3 and an inert gas outlet 13; The inside of the tank 10 is provided with a working electrode 6, a counter electrode 11 and a reference electrode 12. The guide rods of the working electrode 6, the counter electrode 11 and the reference electrode 12 are respectively inserted into the perforated rubber stopper 14 and inserted into the electrolytic cell cover. 4, form a whole, and insert into the interior of the electrolytic cell 10; the top of the electrolytic cell 10 is also provided with a feeder 2, the feeder 2 contains silicon dioxide 1, and the bottom of the feeder 2 is a fe...
Embodiment 2
[0056] The structure of the device is the same as that of Embodiment 1, and the method is the same as that of Embodiment 1, except that:
[0057] (1) Prepare the raw materials of the electrolyte. The raw materials of the electrolyte are fluorinated imidazolium ionic liquid, cryolite, hydrofluoric acid solution and silicon dioxide, of which the fluorinated imidazolium ionic liquid accounts for 96% of the total mass of the electrolyte, and the cryolite accounts for the total mass of the electrolyte. 1% of the total mass of the electrolyte, silicon dioxide accounts for 1.5% of the total mass of the electrolyte, and the hydrofluoric acid solution accounts for 1.5% of the total mass of the electrolyte; the imidazolium fluoride ionic liquid is 1-ethyl-3-methylimidazolium fluoride;
[0058] (2) Control the electrolyte temperature at 20°C and control the current density at 20mA / cm 2 ; the electrode spacing between the working electrode and the counter electrode is 25mm; the effective ...
Embodiment 3
[0063] The structure of the device is the same as that of Embodiment 1, and the method is the same as that of Embodiment 1, except that:
[0064] (1) Prepare the raw materials of the electrolyte. The raw materials of the electrolyte are fluorinated imidazolium ionic liquid, cryolite, hydrofluoric acid solution and silicon dioxide, of which the fluorinated imidazolium ionic liquid accounts for 97% of the total mass of the electrolyte, and the cryolite accounts for the total mass of the electrolyte. 0.5% of the total mass of the electrolyte, silicon dioxide accounts for 1% of the total mass of the electrolyte, and the hydrofluoric acid solution accounts for 1.5% of the total mass of the electrolyte; the imidazolium fluoride ionic liquid is 1-propyl-3-methylimidazolium fluoride;
[0065] (2) Control the electrolyte temperature at 85°C and control the current density at 80mA / cm 2 ; the electrode spacing between the working electrode and the counter electrode is 15mm; the effective...
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