Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

thermoelectric material

A technology of thermoelectric materials and particles, which is applied in the direction of thermoelectric device node lead wire materials, copper compounds, inorganic chemistry, etc., can solve the problems of unsuitable thermoelectric materials and low ZT value, and achieve low thermal conductivity, high ZT value, and excellent thermoelectricity The effect of conversion performance

Active Publication Date: 2017-05-17
LG CHEM LTD
View PDF8 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, see these two results, quite good ZT values ​​are observed between 600°C and 727°C, but very low ZT values ​​are found at temperatures below or equal to 600°C
Although a thermoelectric material has a high ZT value at a high temperature, if the thermoelectric material has a low ZT value at a low temperature, such a thermoelectric material is not preferable, in particular, it is not suitable for a thermoelectric material for power generation

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • thermoelectric material
  • thermoelectric material
  • thermoelectric material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0120] According to the chemical formula Cu 2.01 Se Cu and Se in powder form were weighed and placed in an alumina mortar followed by mixing. The mixed materials were placed in a die to form a pellet which was placed in a fused silica tube and vacuum sealed. Furthermore, the product was placed in a box furnace and heated at 500° C. for 15 hours, and after heating, the product was slowly cooled to room temperature to obtain a compound.

[0121] In addition, the Cu 2.01 The Se compound was filled in the die for hot pressing, and hot pressing sintering was performed at 650° C. under vacuum to obtain a sample of Example 1. In this case, the sintered density is at least 98% of theoretical.

Embodiment 2

[0123] According to the chemical formula Cu 2.025 Se Weighed Cu and Se in powder form, mixed and synthesized by the same procedure as in Example 1 to obtain a compound. Furthermore, this compound was sintered by the same procedure as in Example 1 to obtain a sample of Example 2.

Embodiment 3

[0125] According to the chemical formula Cu 2.05 Se Weighed Cu and Se in powder form, mixed and synthesized by the same procedure as in Example 1 to obtain a compound. In addition, the compound was sintered by the same procedure as in Example 1 to obtain a sample of Example 3.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thermal diffusivityaaaaaaaaaa
Login to View More

Abstract

A thermoelectric conversion material having excellent performance is disclosed. A thermoelectric material according to the present invention includes: a matrix including Cu and Se; and Cu-containing particles.

Description

technical field [0001] The present disclosure relates to thermoelectric conversion technology, and more particularly, to a thermoelectric conversion material having excellent thermoelectric conversion performance and a manufacturing method thereof. [0002] This application claims Korean Patent Application No. 10-2013-0107927 filed in the Republic of Korea on September 9, 2013, Korean Patent Application No. 10-2014-0091973 filed in the Republic of Korea on July 21, 2014, and Korean Patent Application No. 10-2014-0091973 filed in the Republic of Korea on July 21, 2014, and Priority of Korean Patent Application No. 10-2014-0117862 filed in the Republic of Korea, the disclosure of which is incorporated herein by reference. Background technique [0003] A compound semiconductor is a compound composed of at least two types of elements instead of one type of element (for example, silicon or germanium) and used as a semiconductor. Various types of compound semiconductors have been...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/14
CPCC01G3/00C01P2002/72C01P2004/03C01P2006/32C01P2006/40C01B19/007H10N10/851H10N10/852
Inventor 高京门金兑训朴哲熙李载骑
Owner LG CHEM LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com