MiS capacitor structure and manufacturing method thereof

Abstract

The invention provides an MiS capacitor structure and a manufacturing method thereof. The manufacturing method comprises the steps of supplying a substrate with shallow trench isolations at two sides, defining an active region through N+ / P+ injection; depositing a shielding layer on the surface of the active region and patterning, exposing an active region between the shielding layer and the shallow trench isolation at one end; depositing a metal layer and an antireflection layer on the current structure; performing quick thermal annealing, thereby forming a leading-out end between the covered active region and the metal layer above the active region; performing spin coating of a photoresist layer and patterning, so as to etch the antireflection layer and the metal layer through utilizing the photoresist layer on a mask until the edge, the leading-out end and the shallow trench isolation are exposed; removing the photoresist layer and performing quick thermal annealing on the current structure; and depositining an interlayer medium layer above the current structure, and defining the positions of two contact holes in the current structure; wherein one contact hole is connected with the leading-out end, and the other contact hole penetrates through the antireflection layer and is connected with the metal layer. According to the MiS capacitor structure, process complexity and cost of the MiS capacitor are reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular, the invention relates to a novel MiS (metal-insulator-substrate) capacitor structure and a manufacturing method thereof. Background technique [0002] In IC chips, traditional capacitors are PiP (polysilicon-insulator-polysilicon) capacitors or MiM (metal-insulator-metal) capacitors. Both PiP and MiM capacitors require additional reticles and additional costs. In order to reduce the process complexity and cost, a novel capacitor structure and manufacturing method is urgently needed. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a novel MiS capacitor structure and a manufacturing method thereof, which can reduce process complexity and cost. [0004] In order to solve the above-mentioned technical problems, the invention provides a kind of manufacturing method of MiS capacitor st...

AI Technical Summary

Problems solved by technology

Both PiP and MiM capacitors require additional reticle and additional cost

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