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Method for inhibiting charge accumulation on polyimide insulation film

A technology of polyimide film and insulating film is applied in the field of suppressing the accumulation of surface charge of polyimide insulating film, and achieves the effects of simple method, improved corona resistance performance, and huge economic and social benefits.

Inactive Publication Date: 2015-07-29
SHANGQIU NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above situation, in order to solve the defects of the prior art, the object of the present invention is to provide a method for suppressing the accumulation of electric charge on the surface of polyimide insulating film, which can effectively solve the problem of suppressing the accumulation of electric charge on the surface of polyimide insulating film and prolong the use of electric appliances. The problem of longevity

Method used

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  • Method for inhibiting charge accumulation on polyimide insulation film

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Embodiment 1

[0013] In the specific implementation of the present invention, the following method is given. In a closed reaction chamber, the polyimide insulating film material is subjected to gas phase oxyfluoride fluorination treatment by first putting the polyimide insulating film into the reaction In the chamber, evacuate, and then pass a mixed gas consisting of 7.5% fluorine gas, 2.5% oxygen gas and 90% nitrogen gas into the reaction chamber by volume. The surface layer of the polyimide film is subjected to gas-phase oxygen fluorine under the mixed gas The fluorination reaction is 2-5 min, and the reaction temperature is 50-100° C.; the pressure of the mixed gas introduced is 0.05-0.15 MPa.

Embodiment 2

[0015] In the specific implementation of the present invention, it can also be given by the following method. In a closed reaction chamber, the polyimide insulating film material is subjected to gas phase oxyfluoride fluorination treatment by first putting the polyimide insulating film into The reaction chamber is evacuated, and then a mixed gas consisting of 5% fluorine gas, 1% oxygen gas and 94% nitrogen gas is passed into the reaction chamber by volume. The surface layer of the polyimide film is subjected to gas-phase oxygen under the mixed gas. The fluorine fluorination reaction was conducted for 2 minutes, and the reaction temperature was 55° C.; the pressure of the mixed gas introduced was 0.05 MPa.

Embodiment 3

[0017] In the specific implementation of the present invention, it can also be given by the following method. In a closed reaction chamber, the polyimide insulating film material is subjected to gas phase oxyfluoride fluorination treatment by first putting the polyimide insulating film into The reaction chamber is evacuated, and then a mixed gas consisting of 7% fluorine gas, 3% oxygen gas and 90% nitrogen gas is introduced into the reaction chamber by volume. The surface layer of the polyimide film is subjected to gas-phase oxygen under the mixed gas The fluorine fluorination reaction was conducted for 3 minutes, and the reaction temperature was 70°C; the pressure of the mixed gas introduced was 0.09 MPa.

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Abstract

The invention relates to a method for inhibiting charge accumulation on a polyimide insulation film, and aims to effectively prevent charge accumulation on the polyimide insulation film and prolong the service life of electric apparatus. The method comprises the following steps: placing the polyimide insulation film in a reaction chamber for vacuumizing at first; then, introducing a mixed gas composed of fluorine, oxygen and nitrogen into the reaction chamber, and under the action of the mixed gas, conducting a 2-20 minutes' gas-phase oxygen-fluorine fluoridation reaction on the polyimide insulation film at 18-200 DEG C, wherein the mixed gas comprises 1-20% of fluorine, 1-20% of oxygen and the balance of nitrogen according to a volume ratio. The method is easy, simple to operate, low in cost and good in effect, and can be effectively utilized for inhibiting charge accumulation on the polyimide insulation film, thereby improving the corona resistance of the polyimide insulation film as well as the stability and service life of the polyimide insulation film in the technical filed of small-sized motor and electric apparatus frequency conversion.

Description

Technical field [0001] The invention relates to electrical materials, in particular to a method for inhibiting the accumulation of surface charges on a polyimide insulating film. Background technique [0002] In the field of electrical insulation materials, polyimide (PI) film has become the first choice for many organic films in the field of electrical insulation materials due to its excellent dielectric properties, heat resistance and mechanical properties. [0003] Polyimide (PI) is a kind of polymer containing imide ring. Since the PI film was produced by DuPont in the 1960s, PI molding compounds, adhesives, coatings and fibers have appeared one after another. Major varieties. With the continuous development of human society and science and technology, especially the rapid development of high-tech such as military industry, nuclear industry, high-speed railway, and microelectronics industry, PI as a high-performance engineering plastic is widely used in aerospace, nuclear powe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08J7/12C08L79/08
Inventor 刘亚强李朋刘伟民杜雪莲
Owner SHANGQIU NORMAL UNIVERSITY
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