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Silicon nitride nanobelt high-sensitivity pressure sensor

A technology of pressure sensor and nanoribbon, which is applied in the field of preparation of silicon nitride nanoribbon high-sensitivity pressure sensor, can solve the problems of sensitivity and stability to be further improved, and achieve high device structural stability, large contact area and high sensitivity Effect

Active Publication Date: 2015-07-15
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Abstract
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  • Claims
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Problems solved by technology

However, the above-mentioned sensors have the following main problems: 1) It is difficult to be suitable for harsh working conditions such as high temperature; 2) The sensitivity and stability need to be further improved
However, related work has not been reported in the literature at home and abroad

Method used

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  • Silicon nitride nanobelt high-sensitivity pressure sensor
  • Silicon nitride nanobelt high-sensitivity pressure sensor
  • Silicon nitride nanobelt high-sensitivity pressure sensor

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Embodiment 1

[0024] According to the weight ratio of 95:5, take 5 g of the initial raw materials polysilazane and aluminum isopropoxide, put them into a nylon resin ball mill jar and planetary ball mill for 12 hours, mix them evenly and place them in a 99 alumina ceramic crucible. N of MPa 2 Under the gas protection atmosphere, the temperature was raised from room temperature to 260°C at 10°C / min in a tubular sintering furnace, and kept for 0.5 hours for cross-linking and solidification to obtain an amorphous SiAlCN solid. Put the SiAlCN solid into a nylon resin ball mill tank, add 3wt% Al powder as a catalyst, and carry out dry ball milling in a high-energy ball mill for 12 hours, and then place the SiAlCN powder obtained after high-energy ball milling in a 99 alumina ceramic crucible , at a flow of 0.1MPa (200ml / min) N 2 Under the protection of gas atmosphere, the temperature was increased from room temperature to 1550 °C in a tube furnace at 20 °C / min for high-temperature pyrolysis, an...

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Abstract

The invention discloses a method for manufacturing a Si3N4 nanobelt high-sensitivity pressure sensor. The method comprises the following specific steps: (1) putting raw materials, that is, two organic precursors polysilazane and aluminum isopropoxide into a ball-milling tank for planet ball milling in a weight ratio of 95:5; performing low-temperature cross-linking curing on the organic precursors which are uniformly mixed and reacted in the presence of N2 protecting atmosphere so as to obtain non-crystal solid; introducing 3wt% of Al metal powder as a catalyst, and performing high-energy ball-milling crushing; performing high-temperature pyrolysis on the powder obtained through high-energy ball-milling crushing by keeping the temperature of 1550 DEG C for 2 hours in the presence of the N2 protecting atmosphere, thereby preparing a Si3N4 single-crystal nanobelt; (2) performing ultrasonic dispersion on the Si3N4 single-crystal nanobelt in ethanol, and subsequently dropping and spraying onto highly oriented pyrolytic graphite. The Si3N4 nanobelt high-sensitivity pressure sensor can be constructed in an atomic force microscope conductive mode, and by exerting different pressures by using probes, electric signals can be detected under different pressures. Compared with reported operation, the Si3N4 nanobelt high-sensitivity pressure sensor manufactured by using the method can achieve feedback and detection of nN-order force, and is relatively high in sensitivity.

Description

technical field [0001] The invention relates to a preparation method of a silicon nitride nanobelt high-sensitivity pressure sensor, belonging to the technical field of material preparation. Background technique [0002] Sensor technology is one of the key technologies to measure the progress of modernization, and it is widely used in aerospace, petrochemical, geothermal exploration, medical and automotive fields. Among many sensors, semiconductor pressure sensors have attracted much attention because of their excellent performance. [0003] With the continuous development of science and technology, people's demand for high-sensitivity and high-stability pressure sensors is increasingly urgent. At present, the pressure sensors reported at home and abroad mainly include the following types: SOI (Silicon on Insulator) and SOS (Silicon on Sapphire) single crystal silicon, sputtered alloy film, polysilicon, diamond film, optical fiber, and SiC and other high-temperature pressur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/18C01B21/068
Inventor 高凤梅毕精会尉国栋郑金桔尚明辉杨祚宝杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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