Method for grinding silicon chips

Abstract

The invention discloses a method for grinding silicon chips. The method is characterized in that the silicon chips are ground by the aid of PWA9 grinding sand slurry; the silicon chips are respectively ground under multilevel pressures, the first-level pressures range from 265kg to 275kg, the rotational speeds range from 4 revolutions / min to 6 revolutions / min, rotational speed ratios range from 0.4 to 0.6, and the grinding time ranges from 40 seconds to 50 seconds; the second-level pressures range from 140kg to 160kg, the rotational speeds range from 14 revolutions / min to 16 revolutions / min, rotational speed ratios range from 0.4 to 0.6, and the grinding time ranges from 60 seconds to 120 seconds; the third-level pressures range from 110kg to 120kg, the rotational speeds range from 24 revolutions / min to 26 revolutions / min, rotational speed ratios range from 0.4 to 0.6, and the grinding time ranges from 60 seconds to 120 seconds; the fourth-level pressures range from 90kg to 110kg, the rotational speeds range from 28 revolutions / min to 32 revolutions / min, rotational speed ratios range from 0.4 to 0.6, and the grinding time ranges from 40 seconds to 50 seconds; the fifth-level pressures range from 65kg to 75kg, the rotational speeds range from 34 revolutions / min to 36 revolutions / min, rotational speed ratios range from 0.4 to 0.6, and the grinding time ranges from 9min to 11min; the various levels of pressures are switched over at time intervals which range from 5 seconds to 15 seconds. The method for grinding the silicon chips has the advantages that the silicon chips are ground by the aid of PWA9 grinding sand, and accordingly the grinding cost can be reduced by 10%; ground products are high in yield, and the defect rate due to saw marks and fragments can be reduced and reaches 0.5%.

Description

technical field [0001] The invention relates to a silicon wafer grinding method. Background technique [0002] Wafer grinding is an important process in the production of silicon wafers. The grinding process in the prior art uses FO1000 grinding sand, and the grinding cost is high. PWA9 is a kind of grinding sand with a lower price, but when using PWA9 for grinding, the grinding will cause more scratches on the surface of the silicon wafer, and the product yield will be low. After the silicon wafer is ground, the defect rate due to line marks and debris is 1.5%. Contents of the invention [0003] The object of the present invention is to provide a silicon wafer grinding method with low grinding cost in order to overcome the deficiencies in the prior art. [0004] To achieve the above object, the present invention is achieved through the following technical solutions: [0005] The silicon wafer grinding method is characterized in that it is ground with PWA9 grinding mor...

AI Technical Summary

Problems solved by technology

The grinding process in the prior art uses FO1000 grinding sand, and the grinding cost is high

PWA9 is a kind of grinding sand with a lower price, but when using PWA9 to grind, the grinding will cause more scratches on the surface of the silicon wafer, and the product yield is low

After silicon wafer grinding, the defect rate due to line marks and debris is 1.5%

Images