Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Quantum dot-based white LED device and manufacturing method thereof

A technology of LED devices and manufacturing methods, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of secondary absorption of light emission, insufficient color rendering of white light LEDs, etc., achieve high color rendering index, improve luminous efficiency, and color gamut broad effect

Active Publication Date: 2015-06-24
APT ELECTRONICS
View PDF5 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a quantum dot-based white light LED device and its manufacturing method to solve the problems of insufficient color rendering and secondary absorption of light emission in existing white light LEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot-based white LED device and manufacturing method thereof
  • Quantum dot-based white LED device and manufacturing method thereof
  • Quantum dot-based white LED device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] The quantum dot-based white light LED device and its manufacturing method of the present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0027] see figure 1 , the present invention discloses a white light LED device 1 based on quantum dots. The white light LED device 1 based on quantum dots includes an LED chip 11, a light conversion layer 12 coated on the LED chip 11, and a The carrier 13 of the chip 11 , the LED chip 11 is flip-chip mounted in the carrier 13 .

[0028] see figure 2 , the LED chip 11 includes a substrate 111, an N-type gallium nitride 112 covering the substrate 111, a quantum well light-emitting layer 113 partially covering the N-type gallium nitride 112, covering the P-type GaN 114 on the quantum well light-emitting layer 113 , N-contact layer 115 partially covering the N-type GaN 112 , and P-contact layer 116 covering the P-type GaN 114 . The substrate 111 can be a sapphire subst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a quantum dot-based white LED device and a manufacturing method thereof. The quantum dot-based white LED device comprises an LED chip, a light conversion layer coating the LED chip and a carrier carrying the LED chip, wherein the LED chip is reversely arranged in the carrier; the LED chip comprises a substrate; multiple graphic windows are arranged on the substrate; light-emitting material is arranged in the light conversion layer; the light-emitting material comprises quantum dots with different light emitting colors and transparent polymer material; and the quantum dots with different light emitting colors are mutually independently arranged and are arranged in the graphic windows in a covering mode. the quantum dots with different light emitting colors are adopted for light emitting conversion to realize the white LED device, a wider color gamut, a higher color rendering index and a wider spectral emission range can be realized, wide application of the LED device is facilitated, and in addition, as the quantum dots with different light emitting colors are coated regionally, re-absorption between the quantum dots with different light emitting colors can be avoided, and the light-emitting efficiency of the LED device can be improved.

Description

technical field [0001] The invention relates to a semiconductor lighting device, in particular to a white light LED device and a manufacturing method thereof. Background technique [0002] Light-emitting diode (LED) is an electroluminescent device processed by semiconductor manufacturing technology. The main principle of light emission is that the compound semiconductor material is loaded with a forward voltage, and the active electrons and holes recombine to generate photons. Eye recognition produces visible light. At present, because the brightness problem of LEDs has been greatly improved, LEDs are widely used in various fields, including backlight units, automobiles, electric signals, traffic lights, lighting devices, and the like. [0003] The mainstream commercial white LEDs currently on the market are realized by using blue LED chips plus one or more phosphors of yellow, green, and red. In the prior art, the phosphor powder must be evenly coated on the chip surface,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/50
Inventor 万垂铭陈海英许朝军姜志荣肖国伟
Owner APT ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com