Epitaxial GaN structure with silylene as buffer layer and preparation method thereof

A technology of buffer layer and silicene layer, which is applied in the field of optoelectronics, can solve the problems of substrate and epitaxial material stress and thermal expansion coefficient mismatch, cracks, and the quality reduction of epitaxial crystals, so as to improve antistatic ability, high crystal quality, and ease Effects of Thermal Expansion Mismatch

Inactive Publication Date: 2015-06-24
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The above-mentioned documents are typical buffer layers of epitaxial GaN materials. The buffer layers used are all nitride materials, which are relatively close to the properties of epitaxial GaN layers. Although the lattice mismatch can be alleviated, it c...

Method used

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  • Epitaxial GaN structure with silylene as buffer layer and preparation method thereof
  • Epitaxial GaN structure with silylene as buffer layer and preparation method thereof

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Embodiment 1

[0030] Such as figure 1 As shown, the epitaxial GaN structure using silicene as a buffer layer in this embodiment includes a silicon carbide substrate 1 , a silicene layer 2 , a silver droplet layer 3 and a GaN layer 4 . The silicene is grown on the silicon carbide substrate 1, a silver droplet layer is deposited on the silicene layer, and the silicene layer and the silver droplet layer on the silicene layer form a buffer layer. Silicon carbide substrate 1 has a thickness of 600 μm. The total thickness of the silicene layer 2 is 0.1 nm, and the number of layers is 1. The thickness of the silver droplet layer 3 is 3000 nm. GaN layer 4 has a thickness of 6 μm.

[0031] The above-mentioned method for preparing the epitaxial GaN structure using silicene as a buffer layer, the steps are as follows:

[0032] (1) The silicon carbide substrate 1 is cleaned, and two layers of silicene layers 2 are prepared on the substrate 1. The total thickness of the silicene layers 2 is 0.1 nm. ...

Embodiment 2

[0037]The silicon substrate 1 in this embodiment has a thickness of 500 μm. The total thickness of the silicene layer is 500 nm, and the number of layers is 300. The thickness of the silver droplet layer 3 is 5 nm. GaN layer 4 has a thickness of 8 μm.

[0038] The above-mentioned method for preparing the epitaxial GaN structure using silicene as a buffer layer, the steps are as follows:

[0039] (1) The silicon carbide substrate 1 is cleaned, and 300 layers of silicene layers 2 are prepared on the substrate 1, and the total thickness of the silicene layers 2 is 500 nm.

[0040] (2) The silver droplet layer 3 is prepared on the silicene layer 2 by metal-organic chemical vapor deposition. Put the substrate 1 prepared with the silicene layer 2 into the MOCVD reaction chamber, heat the temperature to 50° C., and adjust the pressure to 300 mbar to grow silver droplets. The thickness of the silver droplet layer is 5 nm; the carrier gas used is A 1:5 mixture of nitrogen and hydro...

Embodiment 3

[0043] The silicon substrate 1 in this embodiment has a thickness of 100 μm. The total thickness of the silicene layer is 100 nm, and the number of layers is 100. The thickness of the silver droplet layer 3 is 1000 nm. GaN layer 4 has a thickness of 2 μm.

[0044] The above-mentioned method for preparing the epitaxial GaN structure using silicene as a buffer layer, the steps are as follows:

[0045] (1) The silicon carbide substrate 1 is cleaned, and 100 layers of silicene layers 2 are prepared on the substrate 1, and the total thickness of the silicene layers 2 is 100 nm.

[0046] (2) The silver droplet layer 3 is prepared on the silicene layer 2 by metal-organic chemical vapor deposition. Put the substrate 1 prepared with the silicene layer 1 into the MOCVD reaction chamber, heat the temperature to 1000° C., and adjust the pressure to 200 mbar to grow silver droplets. The thickness of the silver droplet layer is 1000 nm; the carrier gas used is A 5:1 mixture of nitrogen ...

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Abstract

The invention discloses an epitaxial GaN structure with silylene as a buffer layer and a preparation method thereof. The structure comprises the buffer layer and a GaN layer, wherein the buffer layer comprises a silylene layer and a silver droplet layer on the silylene layer, the silylene grows on a substrate, and the silver droplet layer deposits on the silylene layer. The preparation method comprises the following steps that 1, the silylene layer is prepared on the substrate; 2, the silver droplet layer grows on the silylene layer; 3, the GaN layer grows on the sliver droplet layer. The silylene layer is adopted as the buffer layer between the substrate and the GaN epitaxial layer, and the good characteristics of the silylene are combined, namely the silylene has superior electrical conductivity, thermal conductivity and toughness, so that the GaN epitaxial layer with low stress and high crystal quality is obtained; on one hand, the unstable atomic-scale silylene layer is sealed; on the other hand, the connection between the buffer layer and the GaN epitaxial layer is enhanced; the growing GaN epitaxial layer has dislocation with low density, leak current of a device is reduced, and the anti-static electric capacity is improved.

Description

technical field [0001] The invention relates to an epitaxial growth structure and method of gallium nitride, a photoelectric semiconductor material, and belongs to the field of photoelectronic technology. Background technique [0002] Semiconductor light-emitting diodes have the advantages of small size, ruggedness, strong controllability of light-emitting bands, high luminous efficiency, low heat loss, low light decay, energy saving, and environmental protection. Communication and other fields have a wide range of applications, and gradually become a research hotspot in the field of electronic power. Gallium nitride material has a series of advantages such as wide band gap, high electron mobility, high thermal conductivity, high stability, etc., so it has a wide range of applications and huge market prospects in high-brightness blue light-emitting diodes. The lighting field puts forward higher and higher requirements for LEDs. How to improve the luminous efficiency and bri...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L33/02H01L33/00
CPCH01L33/12H01L33/005H01L33/02
Inventor 逯瑶曲爽王成新徐现刚
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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