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Improved cascode radio frequency power amplifier

A radio frequency power, cascode technology, applied in the direction of power amplifiers, etc., can solve problems such as high cost, and achieve the effect of improving performance, compact structure, and reducing layout area

Inactive Publication Date: 2015-06-10
ETRA SEMICON SUZHOU CO LTD
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Problems solved by technology

[0008] It can be seen from the above that the cascode structure RF power amplifier has performance advantages compared with the single transistor cascode structure RF power amplifier, but the cascode structure The layout area is almost twice that of the single-transistor common-source structure, and it has a higher cost than the single-transistor common-source structure

Method used

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  • Improved cascode radio frequency power amplifier
  • Improved cascode radio frequency power amplifier
  • Improved cascode radio frequency power amplifier

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Embodiment 1

[0026] like Figure 4a As shown, in principle, a cascode transistor structure can be simplified as a transistor with four ports: the gate of the common-source transistor G1, the source of the common-source transistor S, the gate of the common-gate transistor G2, Drain of common-gate transistor. The drain of the common-source transistor is connected to the source of the common-gate transistor, and there is no need to connect with the outside world, so this node does not need to be reflected on the circuit; such as Figure 4a The shown cascode transistor structure is defined as a "dual-gate transistor" in the present invention.

[0027] like Figure 4bShown is the layout structure of the double-gate transistor proposed by the present invention. The double-gate transistor 401 is drawn as a common multi-gate finger structure on the layout, that is, a transistor 401 with a larger total gate width is composed of multiple transistors with smaller gate widths connected in parallel....

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Abstract

The invention discloses an improved cascode radio frequency power amplifier. A common-source-stage transistor grid electrode G1, a common-source-stage transistor source electrode S, a common-grid-stage transistor grid electrode G2 and a common-grid-stage transistor drain electrode D are transversely arranged on a substrate, a radio frequency input end RFin is connected with the common-source-stage transistor grid electrode G1 through a metal routing wire, the common-source-stage transistor source electrode S is connected with a grounding hole array through a metal routing wire, the common-grid-stage transistor grid electrode G2 is connected with a bias circuit through a metal routing wire, and the common-grid-stage transistor drain electrode D is connected with a radio frequency output end RFout through a metal routing wire. A cascode structure is adopted, and a layout structure is optimized, so that the improved cascode radio frequency power amplifier has the advantages of high gain, high power, high linearity, high efficiency and the like; layout area equivalent to that of a single-transistor common-source structure radio frequency power amplifier is maintained, so that low cost is realized.

Description

technical field [0001] The invention belongs to the technical field of radio frequency integrated circuits, and in particular relates to an improved cascode radio frequency power amplifier. Background technique [0002] The RF power amplifier is an essential key component in various wireless communication applications. It is used to amplify the power of the modulated RF signal output by the transceiver to meet the power requirements of the RF signal required for wireless communication. RF power amplifiers are large-signal devices, so semiconductor devices used to manufacture RF power amplifiers are required to have characteristics such as high breakdown voltage and high current density. Compared with the Si CMOS process commonly used in small signal circuits such as digital circuits and analog circuits, GaAs-based HBT, pHEMT and other processes, due to their high breakdown voltage and carrier mobility, are widely used in the field of RF power amplifiers. has been widely app...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/20
CPCH03F3/20
Inventor 陈高鹏陈俊刘磊张辉黄清华
Owner ETRA SEMICON SUZHOU CO LTD
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