Vertical structure algan/gan HEMT device and fabrication method thereof

Abstract

The invention discloses a vertical-structure AlGaN / GaN HEMT device. The device comprises a substrate, an epitaxial structure and source, drain and grid electrodes. The epitaxial structure comprises a current blocking layer, a second semiconductor layer, a first semiconductor layer and a passivation layer which are formed in the front of the substrate successively. Two-dimensional electron gas channels are distributed in the first semiconductor layer and / or the second semiconductor layer. The source electrode is electrically connected with the first semiconductor layer, the grid electrode is arranged on the passivation layer, the drain electrode is arranged on the back of the substrate, a high-resistance GaN layer is used on the current blocking layer, and n-type heavy doped current conduction through holes formed by injection of Si ions are distributed in the area of the high-resistance GaN layer below the grid electrode. The device has the advantages of being high in voltage resistance, low in electric leakage and the like. The invention further discloses a manufacturing method of the HEMT device.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a vertical structure AlGaN / GaN HEMT epitaxial growth and its manufacturing method, which can be applied to the manufacture of high electron mobility transistors with low on-resistance, high frequency, and high breakdown voltage, belonging to field of microelectronics technology. Background technique [0002] With the rapid development of wireless communication technology, aerospace technology and hybrid vehicles, the development of power devices as the first generation of semiconductor Si and GaAs devices is increasingly unable to meet the problems of high frequency, high power and harsh environments. The more obvious, especially for the relatively low bandgap width and the relatively low critical breakdown voltage of the two, it is difficult to increase in the pursuit of higher power and frequency. The emerging third-generation semiconductor material GaN has wide bandgap, high breakdow...

AI Technical Summary

Problems solved by technology

[0007] However, regardless of the use of Mg ion implantation or doping, on the one hand, lattice damage will be introduced, especially for the current blocking layer, resulting in a large leakage. Diffusion effect, and the leakage and current collapse effects caused by the lattice damage introduced by Al ion implantation are particularly serious. It can only be repaired at a very high temperature, the temperature is about 1350°C, which is more complicated and relatively expensive for industrial use

These defects have always been the bottleneck restricting the current development of vertical structures.

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