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A kind of graphite surface titanium metallization method and its prepared product

A technology of titanium metal and graphite, applied in the field of titanium metallization method on graphite surface and the products prepared, can solve the problems of large difference in expansion coefficient, elastic modulus, difficult connection, low bonding strength of titanium metallization layer and film base, etc. Achieve the effect of good process repeatability and easy quality control

Inactive Publication Date: 2017-07-07
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the invention of the present invention is: when graphite is connected with metal Cu and Cu alloy, graphite is difficult to be wetted by liquid metal, and the expansion coefficient, elastic modulus difference of both is big, the problem of connection difficulty, provides a kind of graphite surface titanium Metallization method and products prepared therefrom
The invention can effectively solve the problem of low film-base bonding strength of the surface titanium metallization layer in the diffusion bonding process of non-metallic graphite, and can prepare metal titanium films with high film-base bonding strength on the graphite substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The graphite substrate workpiece after vacuum degassing treatment is placed in the magnetron sputtering chamber, and 99.9wt% pure titanium is used as the target material. The process conditions for depositing titanium are: target distance 25mm, deposition time 40min, sputtering power 100W , bias voltage 50V, vacuum degree 0.5Pa. After the magnetron sputtering is completed, a layer of titanium film is formed on the surface of the graphite substrate.

[0026] Then place the graphite matrix workpiece with the titanium film deposited in the hot isostatic pressing equipment for processing, that is, place the graphite matrix workpiece coated with the titanium film in the hot isostatic pressing equipment for heating and pressurization. The treatment process is as follows: the working temperature is 900°C, the working pressure is 40MPa, and the holding time is 5min. After the hot isostatic pressing is completed, cool to room temperature, take out the workpiece, and form a laye...

Embodiment 2

[0028] The graphite substrate is placed in a sintering furnace for vacuum degassing treatment, the sintering temperature is 1400°C, and the vacuum degree is 1×10 - 3 Pa, keep warm for 2 hours, cool to room temperature, and then use distilled water to ultrasonically clean, acetone dehydrated and blow dry.

[0029] Then place the graphite substrate workpiece after vacuum degassing treatment in the magnetron sputtering chamber, use 99.9% pure titanium as the target material, and the process conditions for depositing titanium are: target distance 35mm, deposition time 60min, sputtering power 120W , bias voltage 100V, vacuum degree 1Pa. After the magnetron sputtering is completed, a layer of titanium film is formed on the surface of the graphite substrate.

[0030] Then place the graphite substrate workpiece with the titanium film deposited in the hot isostatic pressing equipment for processing, that is, place the graphite workpiece coated with the titanium film in the hot isosta...

Embodiment 3

[0032] The graphite substrate workpiece after vacuum degassing treatment is placed in the magnetron sputtering chamber, and 99.9% pure titanium is used as the target material. The process conditions for depositing titanium are: target distance 40mm, deposition time 100min, sputtering power 150W, Bias voltage 150V, vacuum degree 1.5Pa. After the magnetron sputtering is completed, a layer of titanium film is formed on the surface of the graphite substrate.

[0033] Then place the graphite substrate workpiece with the titanium film deposited in the hot isostatic pressing equipment for processing, that is, place the graphite workpiece coated with the titanium film in the hot isostatic pressing equipment for heating and pressurization. The treatment process is as follows: the working temperature is 1000°C, the working pressure is 200MPa, and the holding time is 30min. After the hot isostatic pressing is completed, cool to room temperature, take out the workpiece, and form a layer ...

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Abstract

The invention discloses a titanium metallization method on the surface of graphite and a product prepared therefor. The purpose is to solve the problem that graphite is difficult to be wetted by liquid metal and the difference in expansion coefficient and elastic modulus between graphite and metal Cu and Cu alloy. Big, difficult connection problem. In the invention, the titanium film is deposited on the surface of the graphite substrate by using the magnetron sputtering method, and then the deposited titanium film is subjected to hot isostatic pressing treatment, thereby forming the titanium film on the surface of the graphite substrate. The invention can effectively solve the problem of low bonding strength of the film base of the surface titanium metallization layer in the diffusion bonding process of the non-metallic material graphite, and can prepare a metal titanium film with high film base bonding strength on the graphite base body. In the titanium thin film of the present invention, the concentration of titanium gradually increases from the graphite matrix to the outside in a gradient distribution, and the titanium coating and the matrix have good bonding strength. The invention can meet the needs of fusion reactor plasma-oriented material research, and has important significance for the development of fusion reactor related components.

Description

technical field [0001] The invention relates to the field of materials, in particular to the technical field of material surface coatings, in particular to a titanium metallization method on the surface of graphite and a product prepared therefrom. The invention can prepare a titanium film with high film-base bonding strength on the graphite substrate, and has good application prospect. Background technique [0002] Graphite has the advantages of high melting point (3400°C), low density and excellent thermal shock resistance, so it is widely used in energy, aerospace, electronics and other fields. Especially under high temperature conditions, such as plasma-facing components in thermonuclear fusion devices, graphite has better applications. The thermal conductivity of graphite is low (generally around 100W / m·K). When it is used as the bombardment surface of high-temperature heat flow plasma facing the plasma element, in the thermonuclear fusion device, the temperature of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/18C23C14/58
Inventor 李启寿李强程亮王伟陈林杨勇龙亮
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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