Manufacturing method of light emitting diode

Abstract

The invention provides a manufacturing method of a light emitting diode. The manufacturing method comprises the steps: (1) manufacturing a light emitting epitaxial structure on the surface of a sapphire substrate; (2) forming a front scribe lane in the sapphire substrate; (3) completing a chip preparation technology; (4) grinding and thinning; (5) forming a V-shaped groove in the back surface of the sapphire substrate, according to the front scribe lane; (6) cleaning; (7) manufacturing reflecting layer structures on the back surface of the sapphire substrate and the surface of the V-shaped groove; (8) splitting the light emitting epitaxial structure. According to the manufacturing method, SiO2 layers and Ti3O5 layers which are alternately stacked have good reflecting effects; ultrathin middle Ni layers are adopted, so that the reflectivity is not reduced, the bonding performance of Ag reflecting layers and medium laminations is greatly improved, and the Ag reflecting layers are prevented from falling off; the Ni layer and the Ag layers which are alternately stacked are settled in the V-shaped groove, certain extension can be generated during splitting, so as to cover the side walls of the Ag reflecting layers, the side walls of the Ag reflecting layers can be preferably prevented from being oxidized, and the stability and reflectivity of the reflecting layer structures are guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a method for manufacturing a light emitting diode. Background technique [0002] With the rapid development of science and technology, people have more and more choices for lighting devices in life. From traditional tungsten filament bulbs to fluorescent lamps, lighting devices are constantly being introduced. In recent years, light-emitting diodes (Light Emitting Diode, LED) have developed rapidly. Due to their advantages such as small size, high efficiency, long life, and stable photoelectric characteristics, light-emitting diodes are gradually widely used in household appliances, computer screens, mobile phones, and lighting equipment. , medical equipment or traffic signals and other fields. [0003] The luminous efficiency of LED is limited by the external quantum efficiency, and the external quantum efficiency is determined by the internal quantum efficiency and light ...

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for manufacturing a light-emitting diode, which is used to solve the problems that the Ag reflective layer is easy to fall off and easily oxidized in the reflective structure of the light-emitting diode in the prior art.

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