Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Growth device, growth furnace and preparation method of yttrium lithium fluoride laser crystal

A technology of yttrium lithium fluoride and growth device, which is applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of destroying the crystal growth process, difficulty in salvaging floating objects, unstable solid-liquid interface, etc., and achieves high repeatability The effect of stability and stability, the shape of solid-liquid interface is easy to maintain stability, and the control is convenient

Active Publication Date: 2017-12-15
北京雷生强式科技有限责任公司 +1
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] When the Re:YLF laser crystal is grown by the resistance heating reaction atmosphere pulling method, it has defects such as poor temperature field stability, difficulty in salvaging floating objects, unstable solid-liquid interface, and poor quality of the grown crystal; while the induction heating flow inert atmosphere pulling method The influence of oxygen molecules and water molecules cannot be eliminated, and floating substances such as oxyfluorides will be continuously produced, causing crystal quality defects, and even destroying the crystal growth process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Growth device, growth furnace and preparation method of yttrium lithium fluoride laser crystal
  • Growth device, growth furnace and preparation method of yttrium lithium fluoride laser crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0132] This embodiment adopts the provided by the present invention figure 1 The crystal growth device of the shown structure and figure 2 The crystal growth furnace with the structure shown is used to prepare Nd:YLF crystals. Among them, the Φ150×200mm platinum crucible is used to hold the melt; the insulation cylinder is made of 5 layers of insulation cylinders: the first layer of insulation cylinder is made of carbon doped with 10wt%, density ≥ 1.8g / cm 3 , boron nitride (BN) ceramics with a thickness of 10mm; the second layer of insulation cylinder is graphite felt with a thickness of 10mm; the third layer of insulation cylinder is made of carbon-doped 10wt%, density ≥ 1.2g / cm 3 , BN ceramics with a thickness of 10mm; the fourth layer of insulation cylinder is graphite felt with a thickness of 5mm; the fifth layer of insulation cylinder is carbon-doped 0wt%, density ≥ 1.8g / cm 3 , BN ceramics with a thickness of 5mm. The insulating disc at the bottom is composed of 5 lay...

Embodiment 2

[0139] This embodiment adopts the provided by the present invention figure 1 The crystal growth device of the shown structure and figure 2 The crystal growth furnace with the structure shown was used to prepare Ho:YLF crystals. Among them, the Φ120×120mm platinum crucible is used to hold the melt; the insulation cylinder is made of 5 layers of insulation cylinders: the first layer of insulation cylinder is made of carbon doped with 5wt%, density ≥ 1.8g / cm 3 , boron nitride (BN) ceramics with a thickness of 5mm; the second layer of insulation cylinder is graphite felt with a thickness of 10mm; the third layer of insulation cylinder is made of carbon-doped 2wt%, density ≥ 1.2g / cm 3 , BN ceramics with a thickness of 10mm; the fourth layer of insulation cylinder is graphite felt with a thickness of 5mm; the fifth layer of insulation cylinder is carbon-doped 0wt%, density ≥ 1.8g / cm 3 , BN ceramics with a thickness of 5mm. The insulating disc at the bottom is composed of 5 layer...

Embodiment 3

[0146] This embodiment adopts the provided by the present invention figure 1 The crystal growth device of the shown structure and figure 2 A crystal growth furnace with the structure shown was used to prepare Tm:YLF crystals. Among them, the Φ120×180mm platinum crucible is used to hold the melt; the insulation cylinder is made of 5 layers of insulation cylinders: the first layer of insulation cylinder is made of carbon-doped 0wt%, density ≥ 1.8g / cm 3 , boron nitride (BN) ceramics with a thickness of 10mm; the second layer of insulation cylinder is graphite felt with a thickness of 10mm; the third layer of insulation cylinder is made of carbon-doped 10wt%, density ≥ 1.2g / cm 3 , BN ceramics with a thickness of 10mm; the fourth layer of insulation cylinder is graphite felt with a thickness of 5mm; the fifth layer of insulation cylinder is carbon doped with 5wt%, density ≥ 1.8g / cm 3 , BN ceramics with a thickness of 5mm. The insulating disc at the bottom is composed of 5 layer...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
densityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a growth device, a growth furnace and a preparation method of yttrium lithium fluoride laser crystals, belonging to the field of laser crystals; the growth device comprises a crucible, a thermal insulation cylinder, a copper induction heating coil and a seed crystal rod, wherein the thermal insulation cylinder is arranged outside the crucible; the copper induction heating coil is arranged outside the thermal insulation cylinder; the seed crystal rod passes through the top of the thermal insulation cylinder and stretches into the crucible; a first circular hole having the diameter of 60-120mm and used for passing through the seed crystal rod is arranged in the middle at the top of the thermal insulation cylinder; the crucible is a platinum crucible or an iridium crucible; a nickel layer or a high-temperature resistant resin layer is formed on the outside surface of the copper induction heating coil in a spraying manner; and therefore, corrosion of fluoride gas can be avoided. The preparation method of the yttrium lithium fluoride laser crystals is disclosed on the basis of the growth furnace and the growth device of the yttrium lithium fluoride laser crystals. By adopting the induction heating manner, floats are salvaged in a manner of replacing seed crystals; and therefore, steady growth of high-quality yttrium lithium fluoride laser crystals is realized.

Description

technical field [0001] The invention relates to the field of laser crystals, in particular to a growth device, a growth furnace and a preparation method of rare earth ion-doped yttrium lithium fluoride laser crystals. Background technique [0002] Lithium yttrium fluoride (LiYF 4 , referred to as YLF) has the advantages of low phonon energy, wide light transmission band, and negative thermo-optic coefficient. It is an excellent laser crystal matrix material. By making the rare earth ions in the trivalent state partially replace the Y on the yttrium lithium fluoride lattice 3+ Ions can form yttrium lithium fluoride (Re:YLF for short) laser crystals doped with rare earth ions. For example, Nd 3+ Ion substitution moiety Y 3+ After ions, the formed Nd:YLF crystal is a 1μm band laser crystal with excellent performance, and its dosage is second only to Nd:YAG and Nd:YVO 4 ; 3+ Ion and Tm 3+ Ion substitution moiety Y 3+ After ions, the formed Ho:YLF crystals and Tm:YLF crys...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/12C30B27/00
CPCC30B27/02C30B29/12
Inventor 李兴旺马晓明张月娟夏士兴杨国利王永国
Owner 北京雷生强式科技有限责任公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com