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Preparation method of porous-silicon-based and multi-dimensional tungsten-oxide composite structure

A porous silicon-based, composite structure technology, applied in the direction of measuring devices, instruments, scientific instruments, etc., can solve the problem of high working temperature of tungsten oxide, achieve the effect of improving sensitivity and selectivity, less process conditions, and simple operation

Inactive Publication Date: 2015-05-20
TIANJIN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problems existing in the prior art, the present invention provides a method for preparing a porous silicon-based multi-dimensional tungsten oxide composite structure, which overcomes the problem of high working temperature of tungsten oxide used in the detection of harmful gases in the prior art

Method used

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  • Preparation method of porous-silicon-based and multi-dimensional tungsten-oxide composite structure
  • Preparation method of porous-silicon-based and multi-dimensional tungsten-oxide composite structure
  • Preparation method of porous-silicon-based and multi-dimensional tungsten-oxide composite structure

Examples

Experimental program
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Effect test

Embodiment 1

[0042] (1) Cleaning of silicon substrate

[0043] Cut a 2-inch P-type single-crystal silicon substrate with a resistivity of 10-15Ω·cm, a thickness of 400μm, and a crystal orientation of (100) into a rectangular silicon substrate with a size of 2.4cm×0.9cm. Soak silicon wafers in a mixture of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 3:1 for 40 minutes, then soak them in a mixture of hydrofluoric acid and deionized water with a volume ratio of 1:1 for 30 minutes, and then soak them in acetone Ultrasonic cleaning with ethanol for 5 minutes, and finally put the silicon substrate into absolute ethanol for later use.

[0044] (2) Preparation of porous silicon

[0045] The porous silicon layer is prepared on the polished surface of the monocrystalline silicon wafer in step (1) by means of double-groove electrochemical etching, and the electrolytic solution used is composed of 40% hydrofluoric acid and 40% dimethylformamide with a mass concentration. ...

Embodiment 2

[0056] The difference between this example and Example 1 is that the heat treatment temperature of the seed layer in step (4) is 550°C, and the scanning electron microscope analysis results of the surface morphology are as follows: Image 6 with Figure 7 As shown, the prepared tungsten oxide is a hierarchical nanostructure of nanoblocks-nanorods.

Embodiment 3

[0058] The difference between this example and Example 1 is that the heat treatment temperature of the seed layer in step (4) is 600°C, and the scanning electron microscope analysis results of the surface morphology are as follows: Figure 8 with Figure 9 As shown, the scanning electron microscope analysis results of the cross-sectional morphology are as follows Figure 10 As shown, the as-prepared one-dimensional tungsten oxide nanorods grow almost parallel to the porous silicon substrate.

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Abstract

The invention discloses a preparation method of a porous-silicon-based and multi-dimensional tungsten-oxide composite structure, which adopts a hydrothermal method to grow a multi-dimensional nano structure of tungsten oxide on ordered porous silicon and provides the novel porous-silicon-based and multi-dimensional tungsten-oxide composite structure simple in manufacturing process and controllable in morphology. The hydrothermal method is simpler in operation and fewer in process conditions needing to be controlled and has no pollution to the environment. In addition, the prepared porous-silicon-based and multi-dimensional tungsten-oxide composite structure has higher specific surface area; simultaneously, the ordered tungsten-oxide nano-rod array is more beneficial to absorption and free diffusion of gas; and the porous-silicon-based and multi-dimensional tungsten-oxide composite structure has important practice and research values in the aspects of reducing the working temperature of a gas-sensitive sensor and improving the sensitivity and the selectivity of the sensor.

Description

technical field [0001] The invention relates to a method for preparing a porous silicon-based multidimensional tungsten oxide composite structure. Background technique [0002] With the rapid development of modern industrial technology, various harmful gases (such as NO 2 , CO, NH 3 , SO 2 etc.) continue to increase. Of which nitrogen oxides (NO X ) gas is the main cause of acid rain and photochemical smog, which seriously threatens human health and safety while polluting the environment. Therefore, it is of great significance to study high-performance gas sensor materials and devices for detecting nitrogen oxide gases, and has become a research hotspot in recent years. [0003] As a semiconductor sensitive material with great research and application prospects, tungsten oxide has been widely used to detect various toxic and dangerous gases (such as NO 2 , NH 3 Wait). However, the working temperature of tungsten oxide is relatively high (150°C-250°C), and working und...

Claims

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Application Information

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IPC IPC(8): G01N33/00
Inventor 胡明魏玉龙张玮祎马文锋王傲尘
Owner TIANJIN UNIV
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