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Graphene/ boron nitride/zinc oxide ultraviolet detector and preparation method thereof

An ultraviolet detector, zinc oxide technology, applied in the field of photoelectric detection, can solve the problem of large leakage current of devices, and achieve the effects of reducing leakage current, high ultraviolet responsivity, and small size

Active Publication Date: 2015-05-13
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

UV detectors based on graphene and ZnO Schottky junctions have been prepared, but the device has a large leakage current

Method used

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  • Graphene/ boron nitride/zinc oxide ultraviolet detector and preparation method thereof
  • Graphene/ boron nitride/zinc oxide ultraviolet detector and preparation method thereof
  • Graphene/ boron nitride/zinc oxide ultraviolet detector and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0024] 1) Deposit gold electrodes on one side of a clean p-type doped ZnO bulk single crystal by electron beam evaporation;

[0025] 2) The obtained samples were sequentially immersed in deionized water, acetone and isopropanol for surface cleaning to remove the contamination on the ZnO surface during electrode preparation;

[0026] 3) Transfer 7 layers of boron nitride to the other side of the cleaned zinc oxide single wafer;

[0027] 4) transfer the single-layer graphene onto the above-mentioned boron nitride layer;

[0028] 5) Deposit silver electrodes on graphene by thermal evaporation process to obtain graphene / boron nitride / zinc oxide ultraviolet detectors.

[0029] The IV curves of the ultraviolet detector made in this example under dark state and ultraviolet light are as follows figure 2 , image 3 As shown, it can be seen that the reverse bias current is small under the condition of no ultraviolet light, but under the condition of ultraviolet light, the reverse bi...

Embodiment 2

[0031] 1) Deposit a palladium electrode on one side of a clean n-type doped ZnO bulk single wafer by electron beam evaporation;

[0032] 2) The obtained samples were sequentially immersed in deionized water, acetone and isopropanol for surface cleaning to remove contamination on the ZnO surface during electrode preparation;

[0033] 3) Transfer 14 layers of boron nitride to the other side of the cleaned zinc oxide single wafer;

[0034] 4) Transferring two layers of graphene onto the above-mentioned boron nitride layer;

[0035] 5) Deposit gold electrodes on graphene by thermal evaporation process to obtain graphene / boron nitride / zinc oxide ultraviolet detectors.

Embodiment 3

[0037] 1) Electron beam evaporation is used to deposit nickel electrodes on the unpolished side of a clean single-sided polished n-type doped ZnO bulk single crystal;

[0038] 2) The obtained samples were sequentially immersed in deionized water, acetone and isopropanol for surface cleaning to remove contamination on the ZnO surface during electrode preparation;

[0039] 3) Transfer 20 layers of boron nitride to the polished surface of the above-mentioned cleaned zinc oxide single wafer;

[0040] 4) Transfer 1 layer of graphene onto the above-mentioned boron nitride;

[0041] 5) Deposit silver electrodes on graphene by thermal evaporation process to obtain graphene / boron nitride / zinc oxide ultraviolet detectors.

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Abstract

The invention discloses a graphene / boron nitride / zinc oxide ultraviolet detector; the ultraviolet detector is from bottom to top sequentially provided with a back electrode, a zinc oxide layer, a boron nitride layer, a graphene layer and a front electrode. The preparation method thereof comprises the following steps: firstly making the back electrode on one side of a clean zinc oxide; then transferring the boron nitride to the other side of the clean zinc oxide; and then transferring the graphene onto the boron nitride; finally making the front electrode on the graphene, thereby obtaining the graphene / boron nitride / zinc oxide ultraviolet detector. The disclosed graphene / boron nitride / zinc oxide ultraviolet detector uses the high light transmission property of the graphene material, the excellent insulativity and light transmission properties of highly conductive hexagonal boron nitride, in combination with the excellent ultraviolet detection property of the zinc oxide, to make the ultraviolet detector with simple technology, low cost, and high responsivity.

Description

technical field [0001] The invention relates to an ultraviolet detector and a manufacturing method thereof, in particular to a graphene / boron nitride / zinc oxide ultraviolet detector and a manufacturing method thereof, belonging to the technical field of photoelectric detection. Background technique [0002] Ultraviolet detection technology is a widely used dual-use technology for military and civilian purposes. It can be used for civil purposes such as flame monitoring, solar radiation measurement, ultraviolet light source control and arc detection, as well as for ultraviolet alarm, ultraviolet communication, ultraviolet guidance and ultraviolet fields of interference. At present, the widely used ultraviolet detector is photomultiplier tube. Although it has high detection sensitivity, it has large volume, high power consumption and expensive equipment. On the other hand, with the development of integrated optoelectronic technology, there is an urgent need to develop small s...

Claims

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Application Information

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IPC IPC(8): H01L31/102H01L31/0352H01L31/02H01L31/0296H01L31/028H01L31/18
CPCH01L31/0264H01L31/035272H01L31/1055Y02P70/50
Inventor 林时胜吴志乾徐志娟李晓强王朋章盛娇钟汇凯徐文丽陈红胜
Owner ZHEJIANG UNIV
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