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pn junction and its preparation method

A pn junction and n-type technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as restricting the application of SnO and limited types of pn junctions, and achieve the goals of reducing edge discharge effects, low cost, and improving performance Effect

Active Publication Date: 2018-03-30
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Due to the lack of research on SnO semiconductors, the types of pn junctions prepared by SnO are limited, which greatly restricts the application of SnO.

Method used

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preparation example Construction

[0054] In the preparation process of the pn junction of the present invention, if the deposition thickness of the p-type SnO semiconductor layer 120 is too small, the performance of the formed pn junction is poor and cannot meet the practical application; if the deposition thickness is too large, not only the cost is increased, Moreover, it is not conducive to the development trend of miniaturization of devices. Therefore, the thickness of the p-type SnO semiconductor layer 120 is preferably 50nm-80nm, within this thickness range, the obtained pn junction has obvious rectifying effect.

[0055] In the pn junction of the present invention, if the cross-sectional area of ​​the electrode is too small, large resistance will be generated, and the preparation is difficult; if the cross-sectional area of ​​the electrode is too large, electric leakage will easily occur and the safety performance of the device will be reduced. Preferably, as an implementation manner, the ratio of the c...

Embodiment 1

[0093] (1) Cut the n-type single-polished silicon wafer with ρ2 Sample silicon wafers, washed and dried;

[0094] (2) Spin-coat a layer of photoresist on the crystal plane of the sample silicon wafer to form a first mask;

[0095] (3) Form a circular window with a diameter of 160 μm by using the first mask of ultraviolet lithography;

[0096] (4) Utilize electron beam evaporation equipment to evaporate the tin dioxide evaporation material at room temperature, and deposit an amorphous SnO semiconductor layer on the circular window to obtain a Si-SnO composite body; wherein, the deposition thickness of the SnO semiconductor layer is 80nm;

[0097] (5) utilizing acetone and deionized water to clean the Si-SnO complex obtained in step (4);

[0098] (6) Place the cleaned Si-SnO composite in a rapid annealing furnace, and anneal at 350° C. for 10 minutes under an argon atmosphere;

[0099] (7) Spin-coat a layer of photoresist on the surface of the Si-SnO composite body after anneal...

Embodiment 2

[0104] (1) Cut the n-type single-polished silicon wafer with ρ2 Sample silicon wafers, washed and dried;

[0105] (2) Spin-coat a layer of photoresist on the crystal plane of the sample silicon wafer to form a first mask;

[0106] (3) Form a circular window with a diameter of 160 μm by using the first mask of ultraviolet lithography;

[0107] (4) Utilize electron beam evaporation equipment to evaporate the tin dioxide evaporation material at room temperature, and deposit an amorphous SnO semiconductor layer on the circular window to obtain a Si-SnO composite body; wherein, the deposition thickness of the SnO semiconductor layer is 80nm;

[0108] (5) utilizing acetone and deionized water to clean the Si-SnO complex obtained in step (4);

[0109] (6) Place the cleaned Si-SnO composite in a rapid annealing furnace, and anneal at 400°C for 10 minutes under an argon atmosphere;

[0110] (7) Spin-coat a layer of photoresist on the surface of the Si-SnO composite body after anneal...

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Abstract

The invention discloses a pn junction and a preparation method thereof. The pn junction comprises an n-type Si semiconductor layer and a p-type SnO semiconductor layer located in the middle area of the n-type Si semiconductor layer. A first electrode is arranged on the n-type Si semiconductor layer, and a second electrode is arranged on the p-type SnO semiconductor layer. The pn junction has the obvious rectification effect and can be applied to semiconductor devices such as a light emitting diode, a solar battery, a photoelectric detector and a gas sensitive sensor, and the application range of stannous oxide is enlarged.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a pn junction and a preparation method thereof. Background technique [0002] With the rapid development of transparent electronics, the oxide semiconductor pn junction has become a research hotspot. Due to the intrinsic defects of oxides and the limitation of preparation technology, stable and high-performance p-type hole-conducting materials are scarce. [0003] As an emerging intrinsic p-type oxide semiconductor material, SnO has great application potential. At present, for SnO semiconductors, Hiroshi Yanagi et al. have prepared a SnO homojunction with a pulsed laser method, which has a turn-on voltage of 0.7V and a rectification ratio of 25 at ±2V (Bipolar Conduction in SnO Thin Films, Hideo Hosono, Yoichi Ogo et al, Electrochemical and Solid-State Letters, 2011,14,1); K.C.Sanal et al prepared a p-SnO / n-ZnO heterogeneous pn junction by magnetron sputtering method, it...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L29/24H01L21/04H01L21/363
CPCH01L21/04H01L29/06H01L29/24H01L29/401H01L29/41H01L29/66083
Inventor 梁凌燕李秀霞曹鸿涛罗浩刘权秦瑞锋
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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