Silicon carbide ohmic contact electrode and manufacturing method of silicon carbide ohmic contact electrode

Abstract

The invention discloses a silicon carbide ohmic contact electrode and a manufacturing method of the silicon carbide ohmic contact electrode. The manufacturing method includes the steps of providing a SiC wafer material, and cleaning the surface of a SiC wafer; depositing ohmic contact metal Ni on the surface of the SiC wafer; depositing TiW alloy on the ohmic contact metal Ni; conducting high-temperature annealing on ohmic contacts, and completing manufacturing of SiCohmic contact structures. According to the silicon carbide ohmic contact electrode and the manufacturing method, as the TiW alloy has certain oxidation resistance, ohmic contact partial oxidation efficacy losing in the ohmic contact annealing and follow-up technological process can be prevented; the ohmic contacts of TiW / Ni / SiC structures have the better reliability compared with ohmic contacts of Ni / SiC structures.

Description

technical field [0001] The invention is applicable to the field of manufacturing silicon carbide devices, in particular to a silicon carbide ohmic contact electrode and a manufacturing method thereof. Background technique [0002] Silicon carbide (SiC), as a third-generation semiconductor material, has a high band gap (2.4-3.3eV), high thermal conductivity (5-7W·cm -1 K -1 ), high critical breakdown electric field (>2×10 5 V·cm -1 ), electron mobility equivalent to silicon (Si), stable chemical properties, high hardness, friction resistance, and radiation resistance, etc., have a wide range of applications in high temperature, high frequency, high power, etc. [0003] Ohmic contact is a key process technology in semiconductor manufacturing. Its purpose is to make the voltage drop at the contact of the semiconductor material small enough to not affect the performance of the device when a voltage is applied. If the reliability of the ohmic contact resistance is poor, th...

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Problems solved by technology

However, these substances usually face the disadvantages of low hardness, easy to be damaged by machinery; poor corrosion resistance, easy to be corroded and polluted by subsequent processes; weak anti-oxidation ability, easy to be oxidized in high temperature process; poor thermal stability, etc.

These shortcomings will cause damage to the ohmic contact, resulting in an increase in the ohmic contact resistance, or even failure, reducing the reliability of the device

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