Semiconductor device production method

Abstract

The invention discloses a semiconductor device production method. The semiconductor device production method includes: providing a design mask comprising multiple designed main line patterns; lengthening the designed main line patterns or adding auxiliary virtual strip patterns to end points of the designed main line patterns to further obtain a revised deign mask; producing a photoetching mask according to the revised design mask; using the photoetching mask for performing photoetching and etching on a chip; finally, using a cutting mask to cut off unnecessary auxiliary lines according to design requirements. According to the semiconductor device production method, the problem that the lines are easy to break during micropattern processing of a silicon semiconductor substrate is solved, the patterns on the mask are ensured to be completely transferred to the silicon semiconductor substrate, and further reliability and production efficiency of the produced semiconductor device structure are improved.

Description

technical field [0001] The invention relates to a semiconductor manufacturing process, in particular to a method for manufacturing a semiconductor device. Background technique [0002] With the increasing maturity of semiconductor integrated circuit (IC) industrial technology and the rapid development of ultra-large-scale integrated circuits, the size of components is getting smaller and smaller, and the integration level of chips is getting higher and higher. Due to the high density of devices, the requirement of small size has an increasingly prominent impact on semiconductor technology. In the existing advanced technology (such as the process generation below 28 nanometers), as the critical dimension of the pattern, that is, the size of the pattern decreases, the speed of the semiconductor device increases, and the integration of the semiconductor device increases. In the micropatterning process (micro-patterning process) is prone to the problem of poly line pinch, which...

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Problems solved by technology

However, since the current optical proximity correction model (OPC model) is mainly used in the lithography process, the optical proximity correction model combines the optical model (optical model) and the photoresist model (resist model), so in ensuring the integrity of pattern transfer Optical proximity correction does not meet the required requirements

[0007] Therefore, need a kind of new method, to solve the problem that the line that produces when carrying out the micropattern process of silicon semiconductor substrate is broken easily

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